HiPerFETTM Power MOSFET Q2-Class IXFR66N50Q2 VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C 50 A IDM TC = 25°C, pulse width limited by TJM 264 A IA TC = 25°C 66 A EAS TC = 25°C 4 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 500 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TL Maximum lead temperature for soldering 300 °C TSOLD Plastic body for 10s 260 °C VISOL 50/60 Hz, RMS, 1 minute 2500 V~ FC Mounting force 20..120/4.5..27 N/lb. 5 g Weight Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 500 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 33A, Note 1 TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved 500V 50A Ω 85mΩ 250ns ISOPLUS247 (IXFR) E153432 Symbol TJ = = ≤ ≤ Isolated Tab G = Gate S = Source D = Drain Features • Double metal process for low gate resistance • International standard package • Epoxy meet UL 94 V-0, flammability classification • Avalanche energy and current rated • Fast intrinsic Rectifier Advantages • Easy to mount • Space savings • High power density V 5.5 V ± 200 nA 50 μA 2 mA 85 mΩ DS99076A(05/08) IXFR66N50Q2 Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 33A, Note 1 30 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz ISOPLUS247 (IXFR) Outline 44 S 9125 pF 1200 pF Crss 318 pF td(on) 32 ns tr Resistive Switching Times 16 ns td(off) VGS = 10V, VDS = 0.5 • VDSS, ID = 33A 60 ns tf RG = 1Ω (External) 10 ns 200 nC 47 nC 98 nC Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 33A Qgd 0.25 °C/W RthJC RthCS 0.15 Source-Drain Diode TJ = 25°C unless otherwise specified) IS VGS = 0V ISM VSD trr QRM IRM °C/W Characteristic Values Min. Typ. Max. 66 A Repetitive, pulse width limited by TJM 264 A IF = IS, VGS = 0V, Note 1 1.5 V 250 ns IF = 25A, -di/dt = 100A/μs VR = 100V, VGS = 0V 1 μC 10 A Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFR66N50Q2 Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25° C @ 25° C 70 160 VGS = 10V 6V 50 I D - Amperes VGS = 10V 140 8V 7V 40 5.5V 30 20 5V 10 8V 120 I D - Amperes 60 4.5V 100 7V 80 60 40 6V 20 5V 0 0 0 1 2 3 4 5 6 7 0 2 4 6 8 VD S - Volts Fig. 3. Output Characteristics 70 14 16 18 20 3.0 VGS = 10V 60 R D S ( o n ) - Normalized 7V 6V 50 I D - Amperes 12 Fig. 4. RDS(on) Normalized to 0.5 I D25 Value vs. Junction Temperature @ 125° C 40 5V 30 20 4.5V 10 3.5V 0 2 4 6 8 10 12 2.8 2.6 2.4 VGS = 10V 2.2 2.0 1.8 I D = 66A 1.6 I D = 33A 1.4 1.2 1.0 0.8 0.6 0.4 0 14 -50 -25 0 V D S - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to 0.5 I D25 Value Fig. 6. Drain Curre nt v s. Case Te mpe rature vs. I D 3.0 55 2.8 50 VGS = 10V 2.6 45 TJ = 125 °C 2.4 40 2.2 I D - Amperes R D S ( o n ) - Normalized 10 VD S - Volts 2.0 1.8 1.6 1.4 35 30 25 20 15 1.2 10 TJ = 25 °C 1.0 5 0.8 0 0 20 40 60 I D 80 100 - Amperes © 2008 IXYS CORPORATION, All rights reserved 120 140 160 -50 -25 0 25 50 75 100 T C - Degrees Centigrade 125 150 IXFR66N50Q2 Fig. 8. Transconductance Fig. 7. Input Admittance 100 90 90 80 70 70 60 TJ = 125 °C 50 25°C 40 - 40°C g f s - Siemens I D - Amperes 80 TJ = - 40 °C 30 25 °C 60 125 °C 50 40 30 20 20 10 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 20 40 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 10 160 9 VDS = 250V 8 ID = 33A 7 IG = 10mA 140 120 VG S - Volts I S - Amperes D 80 100 120 140 - Amperes Fig. 10. Gate Charge 180 100 80 60 60 I TJ = 125 °C 6 5 4 3 40 2 TJ = 25 °C 20 1 0 0 0.4 0.5 0.6 0.7 0.8 VS D 0.9 1.0 1.1 1.2 1.3 0 20 40 - Volts 60 Q 80 G 100 120 140 160 180 200 - nanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1.000 100000 C iss Z( t h ) J C - ºC / W Capacitance - picoFarads f = 1MHz 10000 C oss 1000 0.100 0.010 C rss 0.001 100 0 5 10 15 20 25 30 35 40 VD S - Volts 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_66N50Q2 (94) 05-28-08-C