IXTT90P10P IXTH90P10P PolarPTM Power MOSFETs VDSS ID25 = = ≤ RDS(on) - 100V - 90A Ω 25mΩ D P-Channel Enhancement Mode Avalanche Rated G TO-268 (IXTT) S G S Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ -100 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C IDM TC = 25°C, Pulse Width Limited by TJM IA D (Tab) - 90 A - 225 A TC = 25°C - 90 A EAS TC = 25°C 2.5 J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 462 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 6 4 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-247) Weight TO-268 TO-247 TO-247 (IXTH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features: z z z z z International Standard Packages Avalanche Rated Fast Intrinsic Diode Rugged PolarPTM Process Low Package Inductance Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. z z BVDSS VGS = 0V, ID = - 250μA -100 VGS(th) VDS = VGS, ID = - 250μA - 2.0 IGSS VGS = ±20V, VDS = 0V ±100 nA IDSS VDS = VDSS, VGS = 0V - 25 μA - 200 μA RDS(on) TJ = 125°C VGS = -10V, ID = 0.5 • ID25, Note 1 © 2013 IXYS CORPORATION, All Rights Reserved V - 4.0 V 25 mΩ z Easy to Mount Space Savings High Power Density Applications z z z z z High-Side Switches Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators DS99986B(01/13) IXTT90P10P IXTH90P10P Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = -10V, ID = 0.5 • ID25, Note 1 22 Ciss Coss VGS = 0V, VDS = - 25V, f = 1MHz 37 S 5800 pF 1990 pF 510 pF 25 ns 77 ns 54 ns 32 ns 120 nC 23 nC 60 nC Crss td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3Ω (External) Qg(on) Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd Terminals: 1 - Gate 3 - Source 2,4 - Drain 0.27 °C/W RthJC RthCS TO-268 Outline TO-247 0.21 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. - 90 A Repetitive, Pulse Width Limited by TJM - 360 A VSD IF = - 45A, VGS = 0V, Note 1 - 3.3 V trr QRM IRM IF = - 45A, -di/dt = -100A/μs VR = - 50V, VGS = 0V 144 0.92 -12.8 TO-247 Outline ns μC A 1 2 ∅P 3 e Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTT90P10P IXTH90P10P Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC -240 -90 VGS = -10V VGS = -10V - 9V -80 -200 - 9V -70 - 8V ID - Amperes ID - Amperes -60 -50 - 7V -40 -30 -160 - 8V -120 - 7V -80 - 6V -20 - 6V -40 - 5V -10 - 5V 0 0 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2 0 -5 -10 -15 -25 -30 Fig. 4. RDS(on) Normalized to ID = - 45A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC -90 2.2 VGS = -10V - 9V -80 VGS = -10V 2.0 -70 R DS(on) - Normalized 1.8 - 8V ID - Amperes -20 VDS - Volts VDS - Volts -60 -50 - 7V -40 -30 - 6V -20 I D = - 90A 1.6 1.4 I D = - 45A 1.2 1.0 0.8 -10 0.6 - 5V 0 0.4 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -50 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = - 45A value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.4 -100 -90 VGS = -10V 2.2 -80 -70 TJ = 125ºC 1.8 ID - Amperes R DS(on) - Normalized 2.0 1.6 1.4 -60 -50 -40 -30 1.2 -20 TJ = 25ºC 1.0 -10 0 0.8 0 -20 -40 -60 -80 -100 -120 ID - Amperes © 2013 IXYS CORPORATION, All Rights Reserved -140 -160 -180 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTT90P10P IXTH90P10P Fig. 8. Transconductance Fig. 7. Input Admittance 60 -100 -90 TJ = - 40ºC TJ = - 40ºC 25ºC 125ºC -80 50 25ºC g f s - Siemens ID - Amperes -70 -60 -50 -40 -30 -20 40 125ºC 30 20 10 -10 0 -3.5 0 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 0 -10 -20 -30 -40 -50 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode -70 -80 -90 -100 -110 110 120 Fig. 10. Gate Charge -240 -10 VDS = - 50V -9 -200 I D = - 45A -8 I G = -1mA -7 VGS - Volts -160 IS - Amperes -60 ID - Amperes -120 -6 -5 -4 TJ = 125ºC -80 -3 TJ = 25ºC -2 -40 -1 0 -0.5 0 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 0 -4.0 10 20 Fig. 11. Capacitance 40 50 60 70 80 90 100 Fig. 12. Forward-Bias Safe Operating Area - 1,000 10,000 Ciss 1ms 100ms - 100 Coss 1,000 100µs 10ms RDS(on) Limit ID - Amperes Capacitance - PicoFarads 30 QG - NanoCoulombs VSD - Volts DC - 10 TJ = 150ºC Crss TC = 25ºC Single Pulse f = 1 MHz 100 -1 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions. -1 - 10 VDS - Volts - 100 IXTT90P10P IXTH90P10P Fig. 13. Maximum Transient Thermal Impedance Z (th )JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2013 IXYS CORPORATION, All Rights Reserved IXYS REF: T_90P10P(B7) 5-13-08