IXYS IXFT20N100P

PolarTM Power MOSFET
HiPerFETTM
IXFH20N100P
IXFT20N100P
VDSS
ID25
RDS(on)
trr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
1000V
20A
Ω
570mΩ
300ns
TO-247 (IXFH)
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
1000
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
1000
V
VGSS
Continuous
± 30
V
VGSM
Transient
± 40
V
ID25
TC = 25°C
20
A
IDM
TC = 25°C, pulse width limited by TJM
50
A
IAR
TC = 25°C
10
A
EAS
TC = 25°C
800
mJ
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
15
V/ns
PD
TC = 25°C
660
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
TJ
=
=
≤
≤
TL
Maximum lead temperature for soldering
300
°C
TSOLD
Plastic body for 10s
260
°C
Md
Mounting torque (TO-247)
1.13/10
Nm/lb.in.
Weight
TO-247
TO-268
6
5
g
g
TAB
TO-268 (IXFT)
G
S
G = Gate
S = Source
TAB
D
= Drain
TAB = Drain
Features
z
z
z
z
International standard packages
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
z
z
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min.
Typ. Max.
BVDSS
VGS = 0V, ID = 1mA
1000
VGS(th)
VDS = VGS, ID = 1mA
3.5
IGSS
VGS = ± 30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
V
6.5
V
± 200
nA
z
Applications:
z
z
25 μA
1.5 mA
TJ = 125°C
VGS = 10V, ID = 0.5 • ID25, Note 1
© 2008 IXYS CORPORATION, All rights reserved
470
570 mΩ
Easy to mount
Space savings
High power density
z
z
z
Switched-mode and resonant-mode
power supplies
DC-DC Converters
Laser Drivers
AC and DC motor controls
Robotics and servo controls
DS99843B(04/08)
IXFH20N100P
IXFT20N100P
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs
Characteristic Values
Min.
Typ.
Max.
VDS = 20V, ID = 0.5 • ID25, Note 1
8
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
RGi
Gate input resistance
td(on)
TO-247 (IXFH) Outline
14
S
7300
pF
456
pF
55
pF
1.20
Ω
40
ns
tr
Resistive Switching Times
37
ns
td(off)
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
56
ns
tf
RG = 2Ω (External)
45
ns
126
nC
50
nC
55
nC
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
0.19 °C/W
RthJC
RthCS
°C/W
(TO-247)
0.21
Source-Drain Diode
TJ = 25°C unless otherwise specified)
Characteristic Values
Min.
Typ.
Max.
IS
VGS = 0V
20
A
ISM
Repetitive, pulse width limited by TJM
80
A
VSD
IF = IS, VGS = 0V, Note 1
1.5
V
trr
IF = 10A, -di/dt = 100A/μs
300 ns
QRM
VR = 100V, VGS = 0V
IRM
0.9
μC
9.0
A
∅P
e
Dim.
Millimeter
Min. Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFH20N100P
IXFT20N100P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
20
40
VGS = 10V
8V
18
VGS = 10V
35
16
ID - Amperes
ID - Amperes
9V
30
14
7V
12
10
8
25
20
8V
15
6
10
6V
4
7V
5
2
0
0
0
1
2
3
4
5
6
7
8
9
10
11
0
5
10
15
20
25
30
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 10A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
20
3.0
VGS = 10V
9V
18
2.8
VGS = 10V
2.6
8V
14
ID - Amperes
RDS(on) - Normalized
16
12
10
8
7V
6
2.4
2.2
2.0
I D = 20A
1.8
1.6
I D = 10A
1.4
1.2
1.0
4
0.8
6V
2
0.6
0
0.4
0
2
4
6
8
10
12
14
16
18
20
22
24
-50
-25
0
VDS - Volts
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 10A Value
vs. Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
22
2.6
VGS = 10V
2.4
20
TJ = 125ºC
18
16
2
ID - Amperes
RDS(on) - Normalized
2.2
1.8
1.6
1.4
14
12
10
8
6
1.2
4
TJ = 25ºC
1
2
0.8
0
0
5
10
15
20
25
ID - Amperes
© 2008 IXYS CORPORATION, All rights reserved
30
35
40
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
125
150
IXFH20N100P
IXFT20N100P
Fig. 7. Input Admittance
Fig. 8. Transconductance
35
32
30
28
TJ = - 40ºC
24
g f s - Siemens
ID - Amperes
25
20
TJ = 125ºC
25ºC
- 40ºC
15
10
25ºC
20
16
125ºC
12
8
5
4
0
0
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
0
9.0
5
10
15
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
25
30
35
Fig. 10. Gate Charge
16
60
VDS = 500V
14
I D = 10A
50
I G = 10mA
12
VGS - Volts
40
IS - Amperes
20
ID - Amperes
30
10
8
6
20
TJ = 25ºC
4
TJ = 125ºC
10
2
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
1.2
20
40
VSD - Volts
60
80
100
120
140
160
180
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
100,000
1.00
Ciss
10,000
1,000
Z(th)JC - ºC / W
Capacitance - PicoFarads
f = 1MHz
Coss
0.10
100
Crss
10
0
5
10
15
20
25
30
35
40
VDS - Volts
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_20N100P (85) 04-01-08-B