Preliminary Technical Information IXFN300N10P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 100 V VGSS Continuous ±20 V VGSM Transient ± 30 V ID25 ILRMS IDM TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM 295 100 900 A A A IA TC = 25°C 100 A EAS TC = 25°C 3 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 20 V/ns PD TC = 25°C 1070 W -55 ... +175 °C TJM 175 °C Features Tstg -55 ... +175 °C 300 °C 2500 3000 V~ V~ • • • • 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g 100V 295A Ω 5.5mΩ 200ns Maximum Ratings TJ TL 1.6mm (0.062 in.) from case for 10s VISOL 50/60 Hz, RMS IISOL ≤ 1mA Md = = ≤ ≤ t = 1min t = 1s Mounting torque Terminal connection torque Weight miniBLOC, SOT-227 B E153432 S G S D G = Gate S = Source Either Source terminal at miniBLOC can be used as Main or Kelvin Source z z z Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 100 z VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 50A, Note 1 TJ = 150°C © 2008 IXYS CORPORATION, All rights reserved z z V 5.0 V ±200 nA 25 1.5 μA mA 5.5 mΩ Fast intrinsic diode Avalanche Rated Low RDS(ON) and QG Low package inductance High current capability Isolation voltage 3000 V~ International standard package Advantages z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) D = Drain Easy to mount Space savings High power density Low gate drive requirement Applications • DC-DC coverters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC and DC motor drives • Uninterrupted power supplies • High speed power switching applications DS100016(07/08) IXFN300N10P Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 55 VDS = 10V, ID = 60A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 100A RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 150A Qgd 92 S 23 nF 6100 pF 417 pF 36 ns 35 ns 56 ns 25 ns 279 nC 84 nC 107 nC RthJC 0.14 RthCS °C/W °C/W 0.05 Source-Drain Diode SOT-227B Outline (IXFN) Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0V ISM Repetitive, pulse width limited by TJM VSD IF = 100A, VGS = 0V, Note 1 trr QRM IRM IF = 150A, -di/dt = 100A/μs 300 A 1000 A 1.3 V 200 ns μC A 0.71 10 VR = 50V Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN300N10P Fig. 2. Output Characteristics @ 150ºC Fig. 1. Extended Output Characteristics @ 25ºC 300 350 VGS = 15V 10V 9V 300 VGS = 15V 10V 9V 250 ID - Amperes ID - Amperes 250 8V 200 150 7V 200 8V 150 7V 100 6V 100 50 50 6V 5V 0 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 0.0 4.0 0.4 0.8 1.2 2.4 2.4 2.8 3.2 3.6 2.4 VGS = 10V 2.2 2.2 RDS(on) - Normalized 2.0 RDS(on) - Normalized 2.0 Fig. 4. RDS(on) Normalized to ID = 150A Value vs. Drain Current Fig. 3. RDS(on) Normalized to ID = 150A Value vs. Junction Temperature 1.8 I D = 300A 1.6 I D = 150A 1.4 1.2 2.0 TJ = 175ºC 1.8 VGS = 10V 15V - - - - - 1.6 1.4 1.2 1.0 TJ = 25ºC 1.0 0.8 0.8 0.6 -50 -25 0 25 50 75 100 125 150 0 175 50 100 150 200 250 300 350 ID - Amperes TJ - Degrees Centigrade Fig. 5. Maximum Drain Current vs. Case Temperature Fig. 6. Input Admittance 200 120 110 180 External Lead Current Limit 100 TJ = 150ºC 25ºC - 40ºC 160 90 140 ID - Amperes ID - Amperes 1.6 VDS - Volts VDS - Volts 80 70 60 50 40 120 100 80 60 30 40 20 20 10 0 0 -50 -25 0 25 50 75 100 TJ - Degrees Centigrade © 2008 IXYS CORPORATION, All rights reserved 125 150 175 3.5 4.0 4.5 5.0 5.5 VGS - Volts 6.0 6.5 7.0 7.5 IXFN300N10P Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. . Transconductance 180 350 TJ = - 40ºC 160 300 250 25ºC 120 100 IS - Amperes g f s - Siemens 140 150ºC 80 200 150 TJ = 150ºC 60 100 40 TJ = 25ºC 50 20 0 0 0 20 40 60 80 100 120 140 160 180 0.3 200 0.4 0.5 0.6 ID - Amperes 0.8 0.9 1.0 1.1 1.2 1.3 Fig. 10. Capacitance Fig. 9. Gate Charge 10 100,000 f = 1 MHz VDS = 50V 9 Ciss I D = 150A 8 Capacitance - PicoFarads I G = 10mA 7 VGS - Volts 0.7 VSD - Volts 6 5 4 3 2 10,000 Coss 1,000 1 Crss 0 0 40 80 120 160 200 240 100 280 0 5 10 QG - NanoCoulombs 15 20 25 30 35 40 VDS - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Forward-Bias Safe Operating Area 1,000 1.000 RDS(on) Limit 100 Z(th)JC - ºC / W ID - Amperes 100µs External Lead Limit 1ms 10 TJ = 175ºC 0.010 10ms TC = 25ºC Single Pulse DC 100ms 1 1 0.100 10 100 1000 VDS - Volts 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_300N10P(9S) 7-22-08