Preliminary Technical Information PolarTM Power MOSFET HiperFETTM IXFK170N20P IXFX170N20P VDSS ID25 = = ≤ RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 200 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 170 A ILRMS IDM Leads Current Limit, RMS TC = 25°C, pulse width limited by TJM 75 400 A A IA TC = 25°C 85 A EAS TC = 25°C 4 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 20 V/ns PD TC = 25°C 1250 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 20..120/4.5..27 1.13/10 N/lb. Nm/lb.in. 6 10 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Md Mounting force Mounting torque Weight PLUS247 TO-264 (PLUS247) (TO-264) 200V 170A Ω 14mΩ D (TAB) S PLUS247 (IXFX) (TAB) G = Gate S = Source D = Drain TAB = Drain Features • Fast intrinsic diode • Avalanche Rated • Low RDS(ON) and QG • Low package inductance Advantages • Low gate charge results in simple drive requirement • High power density Applications Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 200 VGS(th) VDS = VGS, ID = 1mA 3.0 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2008 IXYS CORPORATION, All rights reserved V 5.0 V ±200 nA TJ = 150°C 50 μA 1 mA • DC-DC coverters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC and DC motor control • Uninterrupted power supplies • High speed power switching applications 14 mΩ DS100008(7/08) IXFK170N20P IXFX170N20P Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 45 VDS = 10V, ID = 60A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 75 S 11.4 nF 2440 pF 70 pF 40 ns Crss td(on) Resistive Switching Times tr td(off) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 25 50 ns ns RG = 1Ω (External) 14 ns 185 nC 80 nC 60 nC tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd TO-264 (IXFK) Outline 0.12 °C/W RthJC RthCS 0.15 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 170 A ISM Repetitive, pulse width limited by TJM 510 A VSD IF = 85A, VGS = 0V, Note 1 1.3 V trr QRM IRM IF = 85A, -di/dt = 150A/μs 1.6 20 VR = 100V, VGS = 0V PLUS 247TM (IXFX) Outline 200 ns μC A Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK170N20P IXFX170N20P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 300 180 VGS = 15V 10V 9V 160 9V 240 140 210 120 ID - Amperes ID - Amperes VGS = 15V 10V 270 8V 100 80 60 7V 180 8V 150 120 7V 90 40 60 20 6V 30 0 6V 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 2 4 6 180 12 14 3.4 VGS = 15V 10V 9V 160 RDS(on) - Normalized 8V 120 100 7V 80 60 6V 2.6 I D = 170A 2.2 I D = 85A 1.8 1.4 1.0 40 20 VGS = 10V 3.0 140 ID - Amperes 10 Fig. 4. RDS(on) Normalized to ID = 85A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 0.6 5V 0 0.2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 -50 -25 0 VDS - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 85A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 90 3.8 VGS = 10V 3.4 External Lead Current Limit 80 15V - - - 70 TJ = 175ºC 3.0 ID - Amperes RDS(on) - Normalized 8 VDS - Volts VDS - Volts 2.6 2.2 1.8 60 50 40 30 1.4 20 1.0 10 TJ = 25ºC 0 0.6 0 25 50 75 100 125 150 175 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 200 225 250 275 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXFK170N20P IXFX170N20P Fig. 8. Transconductance Fig. 7. Input Admittance 180 140 TJ = - 40ºC 160 120 TJ = 150ºC 25ºC - 40ºC 120 100 g f s - Siemens ID - Amperes 140 100 80 25ºC 150ºC 80 60 60 40 40 20 20 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0 20 40 60 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 100 120 140 160 180 Fig. 10. Gate Charge 10 350 VDS = 100V 9 I D = 85A 300 8 250 I G = 10mA 7 VGS - Volts IS - Amperes 80 ID - Amperes 200 150 5 4 3 TJ = 150ºC 100 6 TJ = 25ºC 2 50 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 20 40 VSD - Volts 60 80 100 120 140 160 180 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100,000 1,000.0 RDS(on) Limit 10,000 25µs 100µs 100.0 ID - Amperes Capacitance - PicoFarads Ciss Coss 1,000 100 10.0 1ms 1.0 100ms DC TC = 25ºC Single Pulse Crss f = 1 MHz 10ms TJ = 175ºC 10 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 VDS - Volts 1000 200 IXFK170N20P IXFX170N20P Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1.000 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2008 IXYS CORPORATION, All rights reserved IXYS REF: T_170N20P(93)7-16-08