Advance Technical Information IXFN180N25T GigaMOSTM Power MOSFET VDSS ID25 = = 250V 155A Ω 12.9mΩ 200ns RDS(on) ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 250 V G VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 164 A IDM TC = 25°C, Pulse Width Limited by TJM 500 A IA EAS TC = 25°C TC = 25°C 40 3 A J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 900 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s VISOL 50/60 Hz, RMS IISOL ≤ 1mA Md Mounting Torque Terminal Connection Torque t = 1 minute t = 1 second Weight S D G = Gate S = Source Either Source Terminal S can be used as the Source Terminal or the Kelvin Source ( Gate Return ) Terminal. Features z International Standard Package miniBLOC, with Aluminium Nitride Isolation z Isolation voltage 2500 V~ z High Current Handling Capability z Fast Intrinsic Diode z Avalanche Rated z Low RDS(on) z Advantages z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) z Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 250 VGS(th) VDS = VGS, ID = 8mA 2.5 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 60A, Note 1 V 5.0 V TJ = 125°C z nA z 50 µA 3 mA z 12.9 mΩ z z z © 2009 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density Applications z ±200 D = Drain DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS100130(03/09) IXFN180N25T Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 100 160 S 28 nF 2050 pF 158 pF 37 ns 33 ns 100 ns 28 ns 345 nC 122 nC 70 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 15V, VDS = 0.5 • VDSS, ID = 90A RG = 1Ω (External) Qg(on) Qgs SOT-227B (IXFN) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 90A Qgd (M4 screws (4x) supplied) 0.138 °C/W RthJC RthCS 0.05 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 180 A ISM Repetitive, Pulse Width Limited by TJM 720 A VSD IF = 60A, VGS = 0V, Note 1 1.3 V trr QRM IRM IF = 90A, VGS = 0V -di/dt = 100A/µs VR = 75V 0.77 200 ns µC 11 A Note 1: Pulse Test, t ≤ 300µs; Duty Cycle, d ≤ 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN180N25T Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 180 350 VGS = 10V 8V 7V 160 VGS = 10V 300 140 7V 100 ID - Amperes ID - Amperes 250 120 6V 80 200 150 6V 60 100 40 50 5V 20 5V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 2.2 2 4 6 8 10 12 14 16 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ 125ºC Fig. 4. RDS(on) Normalized to ID = 90A Value vs. Junction Temperature 180 18 2.8 VGS = 10V 7V 160 2.6 VGS = 10V 2.4 RDS(on) - Normalized ID - Amperes 140 6V 120 100 80 60 2.0 I D = 180A 1.8 I D = 90A 1.6 1.4 1.2 1.0 5V 40 2.2 0.8 20 0.6 0.4 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 -50 4.4 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 90A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.8 180 2.6 VGS = 10V 160 140 TJ = 125ºC 2.2 120 2.0 ID - Amperes RDS(on) - Normalized 2.4 1.8 1.6 1.4 100 80 60 1.2 40 TJ = 25ºC 1.0 20 0.8 0.6 0 0 50 100 150 200 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 250 300 350 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFN180N25T Fig. 8. Transconductance Fig. 7. Input Admittance 200 280 TJ = - 40ºC 180 240 160 TJ = 125ºC 25ºC - 40ºC 120 200 g f s - Siemens ID - Amperes 140 100 80 25ºC 160 125ºC 120 60 80 40 40 20 0 0 3.4 3.8 4.2 4.6 5.0 5.4 5.8 6.2 6.6 0 20 40 60 80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 140 160 180 200 Fig. 10. Gate Charge 10 350 VDS = 125V 9 I D = 90A 300 8 250 I G = 10mA 7 VGS - Volts IS - Amperes 100 ID - Amperes 200 150 5 4 3 TJ = 125ºC 100 6 TJ = 25ºC 2 50 1 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 50 Fig. 11. Capacitance 150 200 250 300 350 Fig. 12. Forward-Bias Safe Operating Area 1,000 100,000 f = 1 MHz RDS(on) Limit Ciss 25µs 10,000 I D - Amperes Capacitance - PicoFarads 100 QG - NanoCoulombs VSD - Volts Coss 1,000 100 100µs 10 1ms TJ = 150ºC TC = 25ºC Single Pulse Crss 100 1 0 5 10 15 20 25 30 35 40 VDS - Volts 1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_180N25T (9E)03-23-09 IXFN180N25T Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1.000 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: F_180N25T (9E)03-23-09