Advance Technical Information IXFA76N15T2 IXFP76N15T2 TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrnsic Rectifier = 150V = 76A Ω ≤ 20mΩ TO-263 AA (IXFA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 150 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 150 V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 TC = 25°C IDM TC = 25°C, Pulse Width Limited by TJM D (TAB) 76 A 200 A IA TC = 25°C 38 A EAS TC = 25°C 500 mJ dV/dt IS ≤ IDM,, VDD ≤ VDSS,TJ ≤ 175°C 15 V/ns PD TC = 25°C 350 W -55 ... +175 °C TJ TO-220AB (IXFP) G G = Gate S = Source TJM 175 °C z -55 ... +175 °C z 300 260 °C °C 1.13 / 10 Nm/lb.in. 2.5 3.0 g g 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Md Mounting Torque (TO-220) Weight TO-263 TO-220 z z z z z Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 150 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = ± 20V, VDS = 0V ±200 nA IDSS VDS = VDSS, VGS = 0V 5 μA TJ = 150°C RDS(on) VGS = 10V, ID = 0.5 • ID25, Notes 1, 2 z V 4.5 V 750 μA 20 mΩ International Standard Packages 175°C Operating Temperature High Current Handling Capability Fast Intrinsic Rectifier Dynamic dV/dt Rated Low RDS(on) Easy to Mount Space Savings High Power Density Applications z z z z z z z © 2009 IXYS CORPORATION, All Rights Reserved D = Drain TAB = Drain Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) D (TAB) Features Tstg TL Tsold DS DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS100176(08/09) IXFA76N15T2 IXFP76N15T2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 0.5 • ID25, Note 1 50 Ciss Coss 80 S 5800 pF 490 pF 85 pF 17 ns 19 ns 25 ns 14 ns 97 nC 29 nC 30 nC VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.43 °C/W RthJC RthCH TO-263 (IXFA) Outline TO-220 °C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse width limited by TJM VSD IF = 38A, VGS = 0V, Note 1 trr IF = 38A, VGS = 0V IRM QRM -di/dt = 100A/μs VR = 75V 76 A 300 A 1.5 V 69 ns 5.7 A 197 nC 1. 2. 3. 4. Gate Collector Emitter Collector Bottom Side Dim. Millimeter Min. Max. Inches Min. Max. A b b2 4.06 0.51 1.14 4.83 0.99 1.40 .160 .020 .045 .190 .039 .055 c c2 0.40 1.14 0.74 1.40 .016 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .280 .380 .320 E 9.65 10.41 .380 .405 E1 e L L1 L2 L3 L4 6.22 2.54 14.61 2.29 1.02 1.27 0 8.13 BSC 15.88 2.79 1.40 1.78 0.13 .270 .100 .575 .090 .040 .050 0 .320 BSC .625 .110 .055 .070 .005 TO-220 (IXFP) Outline Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFA76N15T2 IXFP76N15T2 Fig. 2. Extended Output Characteristics @ 25ºC Fig. 1. Output Characteristics @ 25ºC 240 80 VGS = 15V 10V VGS = 15V 10V 70 200 8V 160 7V 50 40 ID - Amperes ID - Amperes 60 6V 30 7V 120 80 6V 20 40 10 5V 5V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1.8 2 4 6 8 80 14 16 18 20 22 24 3.4 VGS = 15V 10V 7V 70 VGS = 10V 3.0 60 2.6 R DS(on) - Normalized ID - Amperes 12 Fig. 4. RDS(on) Normalized to ID = 38A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 6V 50 40 30 5V 20 I D = 76A 2.2 I D = 38A 1.8 1.4 1.0 10 0.6 4V 0 0.2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -50 -25 0 VDS - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 38A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 80 4.6 VGS = 10V 4.2 70 TJ = 175ºC 3.8 60 3.4 ID - Amperes R DS(on) - Normalized 10 VDS - Volts VDS - Volts 3.0 2.6 2.2 1.8 TJ = 25ºC 50 40 30 20 1.4 10 1.0 0.6 0 0 20 40 60 80 100 120 140 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 160 180 200 220 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 175 IXFA76N15T2 IXFP76N15T2 Fig. 7. Input Admittance Fig. 8. Transconductance 140 140 120 120 TJ = - 40ºC TJ = 150ºC 25ºC - 40ºC 100 g f s - Siemens ID - Amperes 100 80 60 25ºC 80 150ºC 60 40 40 20 20 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 20 40 60 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 100 120 140 160 Fig. 10. Gate Charge 10 240 VDS = 75V 9 200 I D = 38A 8 I G = 10mA 7 160 TJ = 150ºC 120 VGS - Volts IS - Amperes 80 ID - Amperes TJ = 25ºC 80 6 5 4 3 2 40 1 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 10 20 30 40 Fig. 11. Capacitance 60 70 80 90 100 Fig. 12. Forward-Bias Safe Operating Area 10,000 1,000.0 RDS(on) Limit Ciss 25µs 100.0 1,000 ID - Amperes Capacitance - PicoFarads 50 QG - NanoCoulombs VSD - Volts Coss 100µs 10.0 100 1ms 1.0 Crss 10ms TJ = 175ºC TC = 25ºC Single Pulse f = 1 MHz DC 0.1 10 0 5 10 15 20 25 30 35 40 VDS - Volts 1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_76N15T2(4V)7-02-09 IXFA76N15T2 IXFP76N15T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 22 22 RG = 5Ω 21 RG = 5Ω VGS = 10V t r - Nanoseconds VDS = 75V t r - Nanoseconds VGS = 10V 21 20 19 18 I D = 152A I D = 76A VDS = 75V 20 TJ = 125ºC TJ = 25ºC 19 18 17 17 16 25 35 45 55 65 75 85 95 105 115 30 125 40 50 60 70 80 TJ - Degrees Centigrade 22 20 16.0 19 15.5 16 I D = 76A, 152A 17 16 10 12 14 16 18 tf 14.5 24 14.0 22 I D = 76A, 152A 15 13.5 14 13.0 20 25 20 tf td(off) - - - - 35 45 55 65 75 85 95 105 15 17 32 16 30 15 28 TJ = 125ºC 14 26 TJ = 25ºC 13 24 12 11 60 70 80 90 100 110 120 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 130 140 150 115 18 125 30 tf td(off) - - - - 29 TJ = 125ºC, VGS = 10V VDS = 75V 28 14 27 I D = 152A 13 I D 26 = 76A 12 25 22 11 24 20 160 10 23 4 6 8 10 12 RG - Ohms 14 16 18 20 t d(off) - Nanoseconds VDS = 75V 34 t d(off) - Nanoseconds t f - Nanoseconds 26 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance RG = 5Ω, VGS = 10V 50 160 15.0 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 16 150 28 TJ - Degrees Centigrade 17 40 td(off) - - - - RG - Ohms 18 30 t f - Nanoseconds 17 8 140 VDS = 75V t f - Nanoseconds t r - Nanoseconds 19 6 130 t d(off) - Nanoseconds 18 t d(on) - Nanoseconds 20 4 120 RG = 5Ω, VGS = 10V VDS = 75V 18 110 30 td(on) - - - - TJ = 125ºC, VGS = 10V 21 100 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance tr 90 ID - Amperes IXFA76N15T2 IXFP76N15T2 Fig. 19. Maximum Transient Thermal Impedance 1.000 Z (th)JC - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_76N15T2(4V)7-02-09