IXYS IXTY44N10T

Preliminary Technical Information
IXTP44N10T
IXTY44N10T
TrenchMVTM
Power MOSFET
VDSS
ID25
RDS(on)
N-Channel Enhancement Mode
Avalanche Rated
= 100
V
= 44
A
≤
30 m Ω
TO-220 (IXTP)
D (TAB)
G
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 MΩ
100
100
V
V
VGSM
Transient
± 30
V
ID25
IL
IDM
TC = 25° C
Package Current Limit, RMS
TO-252A
TC = 25° C, pulse width limited by TJM
44
25
140
A
A
A
IAR
E AS
TC = 25° C
TC = 25° C
10
250
A
mJ
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤175° C, RG = 18 Ω
3
V/ns
PD
TC = 25° C
130
W
-55 ... +175
175
-40 ... +175
°C
°C
°C
300
260
°C
°C
TJ
TJM
Tstg
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Md
Mounting torque (TO-220)
Weight
TO-220
TO-252
1.13 / 10 Nm/lb.in.
3
0.8
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
g
g
Characteristic Values
Min. Typ.
Max.
BVDSS
VGS = 0 V, ID = 250 µA
85
VGS(th)
VDS = VGS, ID = 25 µA
2.5
IGSS
VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 22 A, Notes 1, 2
V
TJ = 150° C
22
4.5
V
± 100
nA
1
100
µA
µA
30
mΩ
D S
TO-252 AA (IXTY)
G
S
G = Gate
S = Source
D (TAB)
D = Drain
TAB = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
Distributed Power Architechtures
and VRMs
Electronic Valve Train Systems
High Current Switching
Applications
High Voltage Synchronous Recifier
DS99646 (11/06)
© 2006 IXYS CORPORATION All rights reserved
IXTP44N10T
IXTY44N10T
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
gfs
Characteristic Values
Min. Typ.
Max.
VDS= 10 V; ID = 0.5 ID25, Note 1
13
Ciss
Coss
TO-220 (IXTP) Outline
21
S
1262
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
190
pF
43
pF
Crss
td(on)
Resistive Switching Times
21
ns
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 10 A
47
ns
td(off)
RG = 18 Ω (External)
36
ns
tf
32
ns
Qg(on)
33
nC
10
nC
11
nC
Pins:
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = 10 A
Qgd
2 - Drain
4, TAB - Drain
1.15 °C/W
RthJC
RthCS
1 - Gate
3 - Source
TO-220
°C/W
0.5
Source-Drain Diode
Symbol
Test Conditions
TJ = 25° C unless otherwise specified)
Characteristic Values
Min.
Typ.
Max.
IS
VGS = 0 V
ISM
Repetitive
VSD
IF = 25 A, VGS = 0 V, Note 1
t rr
IF = 25 A, -di/dt = 100 A/µs
44
A
140
A
1.1
V
100
VR = 50 V, VGS = 0 V
ns
Notes:
1. Pulse test: t ≤300 µs, duty cycle
d ≤ 2 %;
2. On through-hole packages, RDS(on)
Kelvin test contact location must be
5 mm or less from the package body.
TO-252 (IXTY) Outline
Dim.
1 Anode
2 NC
3 Anode
4 Cathode
A
A1
A2
b
b1
b2
c
c1
D
D1
E
E1
e
e1
H
L
L1
L2
L3
Millimeter
Min. Max.
2.19 2.38
0.89 1.14
0 0.13
0.64 0.89
0.76 1.14
5.21 5.46
0.46 0.58
0.46 0.58
5.97 6.22
4.32 5.21
6.35 6.73
4.32 5.21
2.28 BSC
4.57 BSC
9.40 10.42
0.51 1.02
0.64 1.02
0.89 1.27
2.54 2.92
Inches
Min.
Max.
0.086
0.035
0
0.025
0.030
0.205
0.018
0.018
0.235
0.170
0.250
0.170
0.090
0.180
0.370
0.020
0.025
0.035
0.100
PRELIMINARY TECHNICAL
INFORMATION
0.094
0.045
0.005
0.035
0.045
0.215
0.023
0.023
0.245
0.205
0.265
0.205
BSC
BSC
0.410
0.040
0.040
0.050
0.115
The product presented herein is under
development. The Technical Specifications offered are derived from data
gathered during objective characterizations of preliminary engineering lots; but
also may yet contain some information
supplied during a pre-production design
evaluation. IXYS reserves the right to
change limits, test conditions, and
dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
7,005,734 B2
7,063,975 B2
7,071,537
IXTP44N10T
IXTY44N10T
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
120
45
VGS = 10V
9V
8V
40
VGS = 10V
100
9V
30
ID - Amperes
ID - Amperes
35
25
7V
20
80
8V
60
40
15
7V
10
6V
20
5
6V
0
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
1.6
2
4
6
8
45
14
16
18
20
3.0
VGS = 10V
9V
8V
40
2.8
RDS(on) - Normalized
30
25
7V
20
15
6V
10
5
VGS = 10V
2.6
35
ID - Amperes
12
Fig. 4. RDS(on) Normalized to ID = 22A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 150ºC
2.4
2.2
2.0
1.8
I D = 44A
1.6
1.4
I D = 22A
1.2
1.0
0.8
5V
0.6
0
0.4
0
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
-50
-25
0
25
50
75
100
125
150
175
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 22A Value
vs. Drain Current
Fig. 6. Drain Current vs. Case Temperature
4.2
50
VGS = 10V
15V - - - -
3.8
TJ = 175ºC
45
40
3.4
35
3.0
ID - Amperes
RDS(on) - Normalized
10
VDS - Volts
VDS - Volts
2.6
2.2
1.8
30
25
External Lead Current Limit for TO-252
20
15
1.4
10
TJ = 25ºC
1.0
5
0
0.6
0
10
20
30
40
50
60
70
80
I D - Amperes
© 2006 IXYS CORPORATION All rights reserved
90
100
110
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
175
IXTP44N10T
IXTY44N10T
Fig. 8. Transconductance
Fig. 7. Input Admittance
70
30
TJ = -40ºC
25ºC
150ºC
24
g f s - Siemens
50
ID - Amperes
TJ = - 40ºC
27
60
40
30
21
25ºC
18
15
150ºC
12
9
20
6
10
3
0
0
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
0
10
20
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
40
50
60
70
Fig. 10. Gate Charge
120
10
VDS = 50V
9
100
I D = 10A
8
I G = 1mA
7
80
VGS - Volts
IS - Amperes
30
I D - Amperes
60
TJ = 150ºC
40
6
5
4
3
TJ = 25ºC
2
20
1
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
0
1.5
5
10
15
20
25
30
35
QG - NanoCoulombs
VSD - Volts
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
10,000
10.00
Ciss
1,000
Z(th)JC - ºC / W
Capacitance - PicoFarads
f = 1 MHz
Coss
100
1.00
0.10
Crss
10
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
0.01
0.00001
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
1
10
IXTP44N10T
IXTY44N10T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
75
75
RG = 18Ω
70
VGS = 10V
VDS = 50V
60
t r - Nanoseconds
t r - Nanoseconds
65
55
50
45
40
I D = 30A
35
30
70
RG = 18Ω
65
VGS = 10V
TJ = 25ºC
VDS = 50V
60
55
50
45
40
35
30
I D = 10A
TJ = 125ºC
25
25
20
20
25
35
45
55
65
75
85
95
105
115
10
125
12
14
16
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
40
32
30
I D = 10A
70
28
60
26
50
24
40
22
30
20
20
20
25
30
35
40
45
50
55
VDS = 50V
I D = 10A
38
30
35
29
32
28
29
27
26
26
60
25
35
45
50
RG = 18Ω, VGS = 10V
105
115
23
125
38
29
34
28
30
TJ = 25ºC
26
22
110
24
26
I D - Amperes
© 2006 IXYS CORPORATION All rights reserved
28
30
100
TJ = 125ºC, VGS = 10V
VDS = 50V
80
t f - Nanoseconds
t f - Nanoseconds
30
20
95
90
70
80
60
70
I D = 10A
50
60
40
26
30
22
20
50
I D = 30A
t d ( o f f ) - Nanoseconds
42
TJ = 125ºC
18
85
td(off) - - - -
tf
90
46
t d ( o f f ) - Nanoseconds
31
16
75
100
VDS = 50V
14
65
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
td(off) - - - -
tf
12
55
TJ - Degrees Centigrade
33
10
41
31
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
27
44
32
RG - Ohms
32
30
47
RG = 18Ω, VGS = 10V
I D = 30A
18
15
28
t d ( o f f ) - Nanoseconds
I D = 30A
80
26
50
33
t d ( o n ) - Nanoseconds
34
90
24
td(off) - - - -
tf
34
36
VDS = 50V
100
22
35
38
TJ = 125ºC, VGS = 10V
110
t r - Nanoseconds
td(on) - - - -
t f - Nanoseconds
120
20
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
130
tr
18
I D - Amperes
40
30
15
20
25
30
35
40
45
50
55
60
RG - Ohms
IXYS REF: T_44N10T (1V) 9-15-06-A.xls