Preliminary Technical Information TrenchT2TM Power MOSFET IXTA230N075T2 IXTP230N075T2 VDSS ID25 = 75V = 230A Ω ≤ 4.2mΩ RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 75 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 75 V VGSM Transient ± 20 V 230 A 75 A ID25 TC = 25°C ILRMS Lead Current Limit, RMS IDM TC = 25°C, pulse width limited by TJM 700 A IA TC = 25°C 115 A EAS TC = 25°C 850 mJ PD TC = 25°C 480 W -55 ... +175 °C TJM 175 °C Tstg -55 ... +175 °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 2.5 3.0 g g TJ TL Tsold 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Md Mounting torque (TO-220) Weight TO-263 TO-220 G S (TAB) TO-220 (IXTP) G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features z z z z International standard packages 175°C Operating Temperature High current handling capability Low RDS(on) Advantages z Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 75 VGS(th) VDS = VGS, ID = 250μA 2.0 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) V 4.0 V ±200 nA 5 TJ = 150°C VGS = 10V, ID = 50A, Notes 1, 2 © 2008 IXYS CORPORATION, All rights reserved μA z z Easy to mount Space savings High power density Applications z z Electrical Motor Drive High current switching DC to DC converter 150 μA 4.2 mΩ DS100042(09/08) IXTA230N075T2 IXTP230N075T2 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 50 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2Ω (External) tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 85 S 10.5 nF 1165 pF 125 pF 23 ns 18 ns 33 ns 15 ns 178 nC 53 nC 41 nC 0.31 °C/W RthJC RthCH TO-263 (IXTA) Outline TO-220 °C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 230 A ISM Repetitive, Pulse width limited by TJM 900 A VSD IF = 100A, VGS = 0V, Note 1 1.3 V trr IF = 115A, VGS = 0V IRM QRM -di/dt = 100A/μs VR = 37V 66 ns 4.4 A 145 nC TO-220 (IXTP) Outline Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA230N075T2 IXTP230N075T2 Fig. 1. Output Characteristics @ 25ºC 240 VGS = 15V 10V 9V 220 200 320 VGS = 15V 10V 9V 280 180 8V 160 140 7V 120 100 80 6V 60 200 7V 160 120 6V 80 40 40 5V 20 8V 240 ID - Amperes ID - Amperes Fig. 2. Extended Output Characteristics @ 25ºC 5V 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.0 1.0 0.5 1.0 1.5 240 2.4 160 7V 140 120 100 6V 80 60 4.0 4.5 VGS = 10V 2.0 I D = 230A 1.8 1.6 I D = 115A 1.4 1.2 1.0 0.8 40 0.6 5V 20 0 0.4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 VDS - Volts 50 75 100 125 150 175 Fig. 6. Drain Current vs. Case Temperature 2.6 90 2.4 80 2.2 External Lead Current Limit 70 TJ = 175ºC ID - Amperes 2.0 1.8 VGS = 10V 1.6 25 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 115A Value vs. Drain Current RDS(on) - Normalized 3.5 2.2 RDS(on) - Normalized ID - Amperes 180 3.0 2.6 VGS = 15V 10V 9V 8V 200 2.5 Fig. 4. RDS(on) Normalized to ID = 115A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 220 2.0 VDS - Volts VDS - Volts 15V - - - - 1.4 60 50 40 30 1.2 20 1.0 TJ = 25ºC 0.8 10 0 0.6 0 50 100 150 200 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 250 300 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTA230N075T2 IXTP230N075T2 Fig. 7. Input Admittance Fig. 8. Transconductance 160 140 140 120 TJ = - 40ºC 100 25ºC 100 TJ = 150ºC 25ºC - 40ºC g f s - Siemens ID - Amperes 120 80 60 150ºC 80 60 40 40 20 20 0 0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 20 40 60 VGS - Volts 300 10 270 9 240 8 210 7 180 6 150 120 TJ = 150ºC 120 140 160 VDS = 38V I D = 115A I G = 10mA 5 4 3 TJ = 25ºC 60 2 30 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1.3 20 VSD - Volts 40 60 80 100 120 140 160 180 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100,000 1000 RDS(on) Limit f = 1 MHz Ciss 25µs 10,000 100 100µs ID - Amperes Capacitance - PicoFarads 100 Fig. 10. Gate Charge VGS - Volts IS - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 90 80 ID - Amperes Coss 1,000 External Lead Current Limit 1ms 10 10ms Crss DC 1 100 0 5 10 15 20 25 30 35 40 VDS - Volts 1 10 100ms 100 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_230N075T2(V6)09-18-08 IXTA230N075T2 IXTP230N075T2 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 22 26 24 21 VGS = 10V 20 VDS = 38V 20 I D = 230A 18 16 I D RG = 2Ω VGS = 10V VDS = 38V 19 t r - Nanoseconds 22 t r - Nanoseconds RG = 2Ω = 115A 18 TJ = 25ºC 17 16 15 14 13 14 TJ = 125ºC 12 12 11 10 110 10 25 35 45 55 65 75 85 95 105 115 125 120 130 140 150 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance TJ = 125ºC, VGS = 10V I D = 230A, 115A VDS = 38V 40 tf 26 RG = 2Ω, VGS = 10V 45 25 15 20 14 10 15 12 10 10 14 40 18 35 16 30 25 I D = 230A 35 45 26 50 TJ = 125ºC 45 18 40 16 35 14 30 105 115 15 125 td(off) - - - - 240 TJ = 125ºC, VGS = 10V VDS = 38V 200 160 200 160 I D = 115A 120 120 80 25 40 10 20 110 120 130 140 150 160 170 180 190 200 210 220 230 0 TJ = 25ºC © 2008 IXYS CORPORATION, All rights reserved 95 280 tf 240 t f - Nanoseconds VDS = 38V ID - Amperes 85 80 I D 40 = 230A 0 2 4 6 8 10 RG - Ohms 12 14 16 t d(off) - Nanoseconds t f - Nanoseconds 55 RG = 2Ω, VGS = 10V 12 75 280 60 td(off) - - - - 20 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance t d(off) - Nanoseconds 22 55 20 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 24 50 45 RG - Ohms tf 55 I D = 115A 25 16 60 VDS = 38V 20 20 5 td(off) - - - - 22 30 12 230 65 24 25 10 220 t d(off) - Nanoseconds 35 8 210 28 30 6 200 50 40 4 190 30 35 2 180 55 t d(on) - Nanoseconds t r - Nanoseconds td(on) - - - - t f - Nanoseconds 45 170 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 50 tr 160 ID - Amperes IXTA230N075T2 IXTP230N075T2 Fig. 19. Maximum Transient Thermal Impedance 1.00 Z (th )JC - ºC / W 0.10 0.01 0.00 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_230N075T2(V6)09-18-08