MMIX2F94N30T - IXYS Corporation

Advance Technical Information
TrenchTM HiperFETTM
Power MOSFET
MMIX2F94N30T
VDSS
ID25
= 300V
= 52A
 40m

RDS(on)
(Electrically Isolated Tab)
D2
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
D1
S2
S1
G2S
G2
G1S
G1
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25C to 150C
300
V
VDGR
TJ = 25C to 150C, RGS = 1M
300
V
VGSS
Continuous
20
V
VGSM
Transient
30
V
ID25
TC = 25C
52
A
IDM
TC = 25C, Pulse Width Limited by TJM
235
A
IA
EAS
TC = 25C
TC = 25C
47
500
A
mJ
PD
TC = 25C
305
W
dv/dt
IS  IDM, VDD  VDSS, TJ  150°C
20
V/ns
-55 to +150
C
TJM
+150
C
Tstg
-55 to +150
C
300
260
°C
°C
2500
V~
50..200 / 11..45
N/lb
8
g
TJ
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
VISOL
50/60 Hz, 1 Minute
FC
Mounting Force
Weight
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 1mA
300
VGS(th)
VDS = VGS, ID = 4mA
3.0
IGSS
VGS = 20V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
Note 2, TJ = 125C
RDS(on)
VGS = 10V, ID = 47A, Note 1
Isolated Tab
S1
S2
D2
G1
G1S
G2
G2S
G = Gate
S = Source
D = Drain
Features
Silicon Chip on Direct-Copper Bond
(DCB) Substrate

Isolated Substrate
- Excellent Thermal Transfer
- Increased Temperature and Power
Cycling Capability
- High Isolation Voltage (2500V~)

Fast Intrinsic Rectifier

Avalanche Rated

Very Low RDS(on)

Advantages
V
5.0
V
200
nA
50
A
2
mA
40 m


Easy to Mount
Space Savings
Applications







© 2014 IXYS CORPORATION, All Rights Reserved
D1
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
DS100620(6/14)
MMIX2F94N30T
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
55
VDS = 10V, ID = 47A, Note 1
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
RGI
Gate Input Resistance
td(on)
Resistive Switching Times
tr
td(off)
tf
VGS = 10V, VDS = 0.5 • VDSS, ID = 47A
RG = 2 (External)
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 47A
Qgd
RthJC
RthCS
RthJA
95
S
11.4
nF
917
pF
116
pF
1.9

40
ns
14
ns
45
ns
12
ns
190
nC
65
nC
53
nC
0.05
30
0.41C/W
C/W
C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
IRM
QRM
IF = 47A, -di/dt = 100A/s,
VR = 100V, VGS = 0V
Notes:
155
10.6
816
94
A
376
A
1.4
V
ns
A
nC
1. Pulse test, t  300μs, duty cycle, d  2%.
2. Part must be heatsunk for high-temp IDSS measurement.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
MMIX2F94N30T
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
100
240
VGS = 10V
7V
90
200
80
160
I D - Amperes
I D - Amperes
70
6V
60
50
40
7V
120
6V
80
30
20
40
5V
10
5V
0
0
0
100
0.5
1
1.5
2
2.5
3
0
3.5
5
10
20
25
VDS - Volts
Fig. 3. Output Characteristics @ TJ = 125ºC
Fig. 4. RDS(on) Normalized to ID = 47A Value vs.
Junction Temperature
2.8
VGS = 10V
7V
VGS = 10V
2.4
70
RDS(on) - Normalized
80
6V
60
50
40
30
5V
20
I D = 94A
2.0
I D = 47A
1.6
1.2
0.8
10
4V
0
0.4
0
1
2
3
4
5
6
7
-50
-25
0
VDS - Volts
25
50
75
100
125
150
125
150
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 47A Value vs.
Drain Current
3.4
Fig. 6. Maximum Drain Current vs.
Case Temperature
60
VGS = 10V
3.0
50
TJ = 125ºC
2.6
40
I D - Amperes
RDS(on) - Normalized
15
VDS - Volts
90
I D - Amperes
VGS = 10V
8V
2.2
1.8
TJ = 25ºC
30
20
1.4
10
1.0
0.6
0
0
40
80
120
160
I D - Amperes
© 2014 IXYS CORPORATION, All Rights Reserved
200
240
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
MMIX2F94N30T
Fig. 7. Input Admittance
180
Fig. 8. Transconductance
180
TJ = - 40ºC
160
160
140
g f s - Siemens
120
I D - Amperes
140
TJ = 125ºC
25ºC
- 40ºC
100
80
25ºC
120
100
125ºC
80
60
60
40
40
20
20
0
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
0
7.0
20
40
60
80
100
120
140
160
180
180
200
I D - Amperes
VGS - Volts
Fig. 9. Forward Voltage Drop of Intrinsic Diode
300
Fig. 10. Gate Charge
10
250
9
VDS = 150V
8
I D = 47A
I G = 10mA
7
6
VGS - Volts
I S - Amperes
200
150
5
4
TJ = 125ºC
100
3
TJ = 25ºC
2
50
1
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
0
20
40
60
80
100
140
160
Fig. 12. Forward-Bias Safe Operating Area @ T C = 25ºC
Fig. 11. Capacitance
1000
100,000
RDS(on) Limit
f = 1 MHz
Ciss
25µs
100
10,000
100µs
I C - Amperes
Capacitance - PicoFarads
120
QG - NanoCoulombs
VSD - Volts
Coss
1,000
10
1
100
1ms
Crss
0.1
10
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10
100
VCE - Volts
1000
MMIX2F94N30T
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
28
28
RG = 2Ω , VGS = 10V
26
RG = 2Ω , VGS = 10V
26
VDS = 150V
VDS = 150V
24
t r - Nanoseconds
t r - Nanoseconds
24
22
I D = 94A
20
18
I D = 47A
16
22
TJ = 125ºC
20
18
16
14
14
12
12
10
TJ = 25ºC
10
25
35
45
55
65
75
85
95
105
115
45
125
50
55
60
65
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
300
tr
250
180
22
80
85
90
95
20
90
I D = 47A
60
50
70
VDS = 150V
t f - Nanoseconds
150
75
18
65
16
60
I D = 47A, 94A
14
55
12
50
10
45
8
40
t d ( o f f ) - Nanoseconds
120
t d ( o n ) - Nanoseconds
200
80
td(off) - - - -
RG = 2Ω, VGS = 10V
VDS = 150V
t r - Nanoseconds
tf
150
TJ = 125ºC, VGS = 10V
100
75
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
24
td(on) - - - -
I D = 94A
70
I D - Amperes
30
0
0
2
4
6
8
10
12
14
16
6
25
18
35
45
55
RG - Ohms
100
td(off) - - - -
90
TJ = 125ºC
70
16
60
14
50
12
40
TJ = 25ºC
10
30
8
20
45
50
55
60
65
70
105
115
35
125
75
80
I D - Amperes
© 2014 IXYS CORPORATION, All Rights Reserved
85
90
95
tf
320
td(off) - - - -
280
TJ = 125ºC, VGS = 10V
250
240
200
200
I D = 47A
150
160
I D = 94A
100
120
50
80
0
40
2
4
6
8
10
RG - Ohms
12
14
16
18
t d ( o f f ) - Nanoseconds
t f - Nanoseconds
80
18
95
VDS = 150V
t d ( o f f ) - Nanoseconds
VDS = 150V
350
300
RG = 2Ω, VGS = 10V
20
85
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
t f - Nanoseconds
tf
22
75
TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
24
65
MMIX2F94N30T
Fig. 19. Maximum Transient Thermal Impedance
1
Z(th)JC - ºC / W
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_94N30T(8G) 6-17-14-A
MMIX2F94N30T
SMPD OUT LINE
Source 1
Drain 1 &
Source 2
Drain 2
© 2014 IXYS CORPORATION, All Rights Reserved