Advance Technical Information TrenchTM HiperFETTM Power MOSFET MMIX2F94N30T VDSS ID25 = 300V = 52A 40m RDS(on) (Electrically Isolated Tab) D2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier D1 S2 S1 G2S G2 G1S G1 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 300 V VDGR TJ = 25C to 150C, RGS = 1M 300 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 52 A IDM TC = 25C, Pulse Width Limited by TJM 235 A IA EAS TC = 25C TC = 25C 47 500 A mJ PD TC = 25C 305 W dv/dt IS IDM, VDD VDSS, TJ 150°C 20 V/ns -55 to +150 C TJM +150 C Tstg -55 to +150 C 300 260 °C °C 2500 V~ 50..200 / 11..45 N/lb 8 g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force Weight Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 300 VGS(th) VDS = VGS, ID = 4mA 3.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V Note 2, TJ = 125C RDS(on) VGS = 10V, ID = 47A, Note 1 Isolated Tab S1 S2 D2 G1 G1S G2 G2S G = Gate S = Source D = Drain Features Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Substrate - Excellent Thermal Transfer - Increased Temperature and Power Cycling Capability - High Isolation Voltage (2500V~) Fast Intrinsic Rectifier Avalanche Rated Very Low RDS(on) Advantages V 5.0 V 200 nA 50 A 2 mA 40 m Easy to Mount Space Savings Applications © 2014 IXYS CORPORATION, All Rights Reserved D1 DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS100620(6/14) MMIX2F94N30T Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 55 VDS = 10V, ID = 47A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGI Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 47A RG = 2 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 47A Qgd RthJC RthCS RthJA 95 S 11.4 nF 917 pF 116 pF 1.9 40 ns 14 ns 45 ns 12 ns 190 nC 65 nC 53 nC 0.05 30 0.41C/W C/W C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr IRM QRM IF = 47A, -di/dt = 100A/s, VR = 100V, VGS = 0V Notes: 155 10.6 816 94 A 376 A 1.4 V ns A nC 1. Pulse test, t 300μs, duty cycle, d 2%. 2. Part must be heatsunk for high-temp IDSS measurement. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 MMIX2F94N30T Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 100 240 VGS = 10V 7V 90 200 80 160 I D - Amperes I D - Amperes 70 6V 60 50 40 7V 120 6V 80 30 20 40 5V 10 5V 0 0 0 100 0.5 1 1.5 2 2.5 3 0 3.5 5 10 20 25 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125ºC Fig. 4. RDS(on) Normalized to ID = 47A Value vs. Junction Temperature 2.8 VGS = 10V 7V VGS = 10V 2.4 70 RDS(on) - Normalized 80 6V 60 50 40 30 5V 20 I D = 94A 2.0 I D = 47A 1.6 1.2 0.8 10 4V 0 0.4 0 1 2 3 4 5 6 7 -50 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 47A Value vs. Drain Current 3.4 Fig. 6. Maximum Drain Current vs. Case Temperature 60 VGS = 10V 3.0 50 TJ = 125ºC 2.6 40 I D - Amperes RDS(on) - Normalized 15 VDS - Volts 90 I D - Amperes VGS = 10V 8V 2.2 1.8 TJ = 25ºC 30 20 1.4 10 1.0 0.6 0 0 40 80 120 160 I D - Amperes © 2014 IXYS CORPORATION, All Rights Reserved 200 240 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 MMIX2F94N30T Fig. 7. Input Admittance 180 Fig. 8. Transconductance 180 TJ = - 40ºC 160 160 140 g f s - Siemens 120 I D - Amperes 140 TJ = 125ºC 25ºC - 40ºC 100 80 25ºC 120 100 125ºC 80 60 60 40 40 20 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 20 40 60 80 100 120 140 160 180 180 200 I D - Amperes VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 300 Fig. 10. Gate Charge 10 250 9 VDS = 150V 8 I D = 47A I G = 10mA 7 6 VGS - Volts I S - Amperes 200 150 5 4 TJ = 125ºC 100 3 TJ = 25ºC 2 50 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 20 40 60 80 100 140 160 Fig. 12. Forward-Bias Safe Operating Area @ T C = 25ºC Fig. 11. Capacitance 1000 100,000 RDS(on) Limit f = 1 MHz Ciss 25µs 100 10,000 100µs I C - Amperes Capacitance - PicoFarads 120 QG - NanoCoulombs VSD - Volts Coss 1,000 10 1 100 1ms Crss 0.1 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VCE - Volts 1000 MMIX2F94N30T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 28 28 RG = 2Ω , VGS = 10V 26 RG = 2Ω , VGS = 10V 26 VDS = 150V VDS = 150V 24 t r - Nanoseconds t r - Nanoseconds 24 22 I D = 94A 20 18 I D = 47A 16 22 TJ = 125ºC 20 18 16 14 14 12 12 10 TJ = 25ºC 10 25 35 45 55 65 75 85 95 105 115 45 125 50 55 60 65 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 300 tr 250 180 22 80 85 90 95 20 90 I D = 47A 60 50 70 VDS = 150V t f - Nanoseconds 150 75 18 65 16 60 I D = 47A, 94A 14 55 12 50 10 45 8 40 t d ( o f f ) - Nanoseconds 120 t d ( o n ) - Nanoseconds 200 80 td(off) - - - - RG = 2Ω, VGS = 10V VDS = 150V t r - Nanoseconds tf 150 TJ = 125ºC, VGS = 10V 100 75 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 24 td(on) - - - - I D = 94A 70 I D - Amperes 30 0 0 2 4 6 8 10 12 14 16 6 25 18 35 45 55 RG - Ohms 100 td(off) - - - - 90 TJ = 125ºC 70 16 60 14 50 12 40 TJ = 25ºC 10 30 8 20 45 50 55 60 65 70 105 115 35 125 75 80 I D - Amperes © 2014 IXYS CORPORATION, All Rights Reserved 85 90 95 tf 320 td(off) - - - - 280 TJ = 125ºC, VGS = 10V 250 240 200 200 I D = 47A 150 160 I D = 94A 100 120 50 80 0 40 2 4 6 8 10 RG - Ohms 12 14 16 18 t d ( o f f ) - Nanoseconds t f - Nanoseconds 80 18 95 VDS = 150V t d ( o f f ) - Nanoseconds VDS = 150V 350 300 RG = 2Ω, VGS = 10V 20 85 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance t f - Nanoseconds tf 22 75 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 24 65 MMIX2F94N30T Fig. 19. Maximum Transient Thermal Impedance 1 Z(th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_94N30T(8G) 6-17-14-A MMIX2F94N30T SMPD OUT LINE Source 1 Drain 1 & Source 2 Drain 2 © 2014 IXYS CORPORATION, All Rights Reserved