Advance Technical Information IXFH86N30T IXFT86N30T TrenchTM HiperFETTM Power MOSFET VDSS ID25 = 300V = 86A ≤ 43mΩ Ω RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 300 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 86 A IDM TC = 25°C, Pulse Width Limited by TJM 190 A IA EAS TC = 25°C 15 2 A J PD TC = 25°C 830 W dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns -55 to +150 °C TJM +150 °C Tstg -55 to +150 °C TJ G D D (Tab) S TO-268 (IXFT) G S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features TL 1.6mm (0.063in) from Case for 10s 300 °C TSOLD Plastic Body for 10s 260 °C z Md Mounting Torque (TO-247) 1.13/10 Nm/lb.in. z Weight TO-247 TO-268 6.0 4.0 g g International Standard Packages Avalanche Rated z High Current Handling Capability z Fast Intrinsic Rectifier z Low RDS(on) Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 300 VGS(th) VDS = VGS, ID = 4mA 3.0 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5 • ID25 , Note 1 z z V 5.0 V ±200 nA 50 μA 1.75 mA z Applications z z z 43 mΩ z z z z © 2009 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching DS100208(11/09) IXFH86N30T IXFT86N30T Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 70 VDS = 10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3.3Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 115 S 11.3 nF 720 pF 87 pF 16 ns 18 ns 54 ns 15 ns 180 nC 48 nC 50 nC 0.15 °C/W RthJC RthCS TO-247 (IXFH) Outline TO-247 0.21 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr IRM QRM IF = 43A, -di/dt = 100A/μs, VR = 100V, VGS = 0V 8.5 460 86 A 340 A 1.5 V 150 ns A nC 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 (IXFT) Outline Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFH86N30T IXFT86N30T Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 200 90 VGS = 10V 7V 80 160 70 6V 140 ID - Amperes ID - Amperes 60 50 40 30 5V 6V 120 100 5.5V 80 60 20 40 10 20 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 5V 0 4.0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = 43A Value vs. Junction Temperature 90 3.2 VGS = 10V 80 VGS = 10V 2.8 70 R DS(on) - Normalized 6V 60 ID - Amperes VGS = 10V 7V 180 5V 50 40 30 2.4 I D = 86A 2.0 I D = 43A 1.6 1.2 20 0.8 10 0 0.4 0 1 2 3 4 5 6 7 8 -50 9 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 43A Value vs. Drain Current 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 90 3.8 VGS = 10V 3.4 80 TJ = 125ºC 3.0 70 60 2.6 ID - Amperes R DS(on) - Normalized 25 TJ - Degrees Centigrade 2.2 1.8 1.4 50 40 30 20 TJ = 25ºC 1.0 10 0.6 0 0 20 40 60 80 100 120 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 140 160 180 200 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFH86N30T IXFT86N30T Fig. 7. Input Admittance Fig. 8. Transconductance 140 200 TJ = - 40ºC 180 120 160 TJ = 125ºC 25ºC - 40ºC 140 g f s - Siemens ID - Amperes 100 80 60 25ºC 120 100 125ºC 80 60 40 40 20 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 20 40 60 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 100 120 140 Fig. 10. Gate Charge 240 10 VDS = 150V 9 200 I D = 43A 8 I G = 10mA 7 160 VGS - Volts IS - Amperes 80 ID - Amperes 120 TJ = 125ºC 80 6 5 4 3 TJ = 25ºC 2 40 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 20 40 VSD - Volts 60 80 100 120 140 160 180 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100,000 1,000.0 f = 1 MHz RDS(on) Limit 10,000 100.0 25µs I D - Amperes Capacitance - PicoFarads Ciss Coss 1,000 100µs 10.0 1ms 1.0 100 TJ = 150ºC Crss TC = 25ºC Single Pulse 100m 0.1 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 10ms 1000 IXFH86N30T IXFT86N30T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 26 26 RG = 3.3Ω , VGS = 15V VDS = 150V 24 I 22 D t r - Nanoseconds t r - Nanoseconds RG = 3.3Ω , VGS = 15V VDS = 150V 24 = 86A 20 I 18 D = 43A TJ = 125ºC 22 20 18 TJ = 25ºC 16 16 14 14 25 35 45 55 65 75 85 95 105 115 40 125 45 50 55 60 TJ - Degrees Centigrade 26 tr td(on) - - - - 17 22 15 15 I D = 43A 20 14 19 14 18 6 8 10 12 14 16 tf td(off) - - - - 20 65 I D = 86A 18 60 I D = 43A 16 12 25 18 35 45 55 80 70 17 65 TJ = 125ºC 16 60 TJ = 25ºC 55 14 50 13 45 55 60 65 105 115 45 125 70 75 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 80 85 90 20 td(off) - - - 75 TJ = 125ºC, VGS = 15V VDS = 150V 18 70 I 16 D = 86A 65 14 60 I D = 43A 12 55 10 50 2 4 6 8 10 RG - Ohms 12 14 16 18 t d ( o f f ) - Nanoseconds VDS = 150V 50 95 80 tf 75 t d ( o f f ) - Nanoseconds t f - Nanoseconds td(off) - - - - RG = 3.3Ω, VGS = 15V 45 85 22 t f - Nanoseconds tf 40 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 20 15 65 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 18 55 50 RG - Ohms 19 70 RG = 3.3Ω, VGS = 15V 14 13 4 90 VDS = 150V t f - Nanoseconds t r - Nanoseconds 16 2 85 t d ( o f f ) - Nanoseconds 16 t d ( o n ) - Nanoseconds VDS = 150V 23 21 80 75 22 TJ = 125ºC, VGS = 15V I D = 86A 75 24 17 24 70 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 25 65 ID - Amperes IXFH86N30T IXFT86N30T Fig. 19. Maximum Transient Thermal Impedance 1.000 Z (th)JC - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_86N30T(8W)10-21-09