Advance Technical Information IXFH150N17T2 IXFT150N17T2 TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 = = ≤ ≤ RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 175V 150A Ω 12.0mΩ 160ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ 175 175 V V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 IDM TC = 25°C TC = 25°C, Pulse Width Limited by TJM 150 400 A A IA EAS TC = 25°C TC = 25°C 75 1.0 A J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 15 V/ns PD TC = 25°C 880 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque (TO-247) Weight TO-247 TO-268 G Nm/lb.in. 6 4 g g D (Tab) S TO-268 (IXFT) G S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features z z 1.13/10 D z z z High Current Handling Capability Fast Intrinsic Diode Dynamaic dv/dt Rated Avalanche Rated Low RDS(on) Advantages z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 175 VGS(th) VDS = VGS, ID = 1mA 2.5 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 z V 4.5 V ± 200 nA 10 μA 1.5 mA TJ = 150°C 9.7 12.0 mΩ Applications z z z z z z z © 2010 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS100229(01/10) IXFH150N17T2 IXFT150N17T2 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 100 165 S 14.6 nF 1100 pF 136 pF 32 ns 16 ns 50 ns 20 ns 233 nC 67 nC 63 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.17 °C/W RthJC RthCS TO-247 (IXFH) Outline TO-247 °C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 150 A ISM Repetitive, Pulse Width Limited by TJM 600 A VSD IF = 100A, VGS = 0V, Note 1 1.3 V 160 ns trr IRM QRM IF = 75A, -di/dt = 100A/μs VR = 75V, VGS = 0V 7.80 A 0.34 μC 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 (IXFT) Outline Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Terminals: 1 - Gate 3 - Source 2 - Drain ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFH150N17T2 IXFT150N17T2 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 350 160 VGS = 10V 8V 7V 140 120 7V 250 6V 100 ID - Amperes ID - Amperes VGS = 10V 8V 300 80 60 200 6V 150 100 40 5V 50 20 5V 4V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1.8 2 3 5 6 7 8 9 10 150 175 Fig. 3. Output Characteristics @ T J = 150ºC Fig. 4. RDS(on) Normalized to ID = 75A Value vs. Junction Temperature 3.4 VGS = 10V 7V 140 VGS = 10V 3.0 6V 2.6 R DS(on) - Normalized 120 100 80 5V 60 40 ID = 150A 2.2 ID = 75A 1.8 1.4 1.0 20 0.6 4V 0 0.2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -50 -25 0 VDS - Volts 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 75A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 160 4.0 VGS = 10V 140 TJ = 175ºC 3.5 120 3.0 ID - Amperes R DS(on) - Normalized 4 VDS - Volts 160 ID - Amperes 1 VDS - Volts 2.5 2.0 1.5 TJ = 25ºC 100 80 60 40 1.0 20 0 0.5 0 50 100 150 200 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 250 300 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 175 IXFH150N17T2 IXFT150N17T2 Fig. 7. Input Admittance Fig. 8. Transconductance 200 300 180 TJ = - 40ºC 250 160 TJ = 150ºC 25ºC - 40ºC 120 25ºC g f s - Siemens ID - Amperes 140 100 80 60 200 150ºC 150 100 40 50 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 0 6.0 20 40 60 80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 140 160 180 200 220 220 240 Fig. 10. Gate Charge 10 300 250 9 VDS = 85V 8 I G = 10mA I D = 75A 7 VGS - Volts 200 IS - Amperes 100 ID - Amperes 150 TJ = 150ºC 100 6 5 4 3 TJ = 25ºC 2 50 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 20 40 60 80 VSD - Volts 120 140 160 180 200 Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1,000 100 RDS(on) Limit f = 1 MHz 25µs Ciss 100 10 ID - Amperes Capacitance - NanoFarads 100 QG - NanoCoulombs Coss 100µs 10 1ms 1 1 10ms TJ = 175ºC DC TC = 25ºC Crss Single Pulse 0.1 0 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXFH150N17T2 IXFT150N17T2 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 24 24 RG = 1Ω , VGS = 10V 23 VDS = 85V 22 21 I D = 150A 20 19 I 18 = 75A D 17 TJ = 125ºC 21 t r - Nanoseconds t r - Nanoseconds 22 RG = 1Ω , VGS = 10V 23 VDS = 85V 20 19 18 17 16 16 15 15 TJ = 25ºC 14 14 25 35 45 55 65 75 85 95 105 115 30 125 40 50 60 70 80 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 80 75 VDS = 85V 300 60 250 55 I D = 75A 200 50 150 45 100 40 50 35 0 3 4 5 6 7 8 9 VDS = 85V 26 65 60 I D = 150A, 75A 22 55 18 50 14 45 10 40 6 25 10 35 45 55 65 75 85 95 105 115 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance td(off) - - - - 75 600 70 500 55 TJ = 25ºC, 125ºC 17 50 16 45 15 50 60 70 80 90 100 110 120 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 250 130 140 40 150 400 200 300 150 I D = 150A 200 100 I D = 75A 100 50 0 0 1 2 3 4 5 6 RG - Ohms 7 8 9 10 t d(off) - Nanoseconds 60 t d(off) - Nanoseconds 65 19 40 td(off) - - - - TJ = 125ºC, VGS = 10V VDS = 85V VDS = 85V 18 35 125 300 tf t f - Nanoseconds tf RG = 1Ω, VGS = 10V 20 150 70 TJ - Degrees Centigrade 21 t f - Nanoseconds td(off) - - - - RG - Ohms 22 30 tf 30 30 2 140 t d(off) - Nanoseconds 65 I D = 150A 1 130 RG = 1Ω, VGS = 10V 70 350 120 75 34 t d(on) - Nanoseconds t r - Nanoseconds td(on) - - - - TJ = 125ºC, VGS = 10V 400 110 38 t f - Nanoseconds tr 100 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 500 450 90 ID - Amperes IXFH150N17T2 IXFT150N17T2 Fig. 19. Maximum Transient Thermal Impedance 1.000 Z (th)JC - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF:F_150N17T2(7V)1-14-10