MMIX1F180N25T - IXYS Corporation

Preliminary Technical Information
MMIX1F180N25T
GigaMOSTM TrenchTM
HiperFETTM
Power MOSFET
VDSS
ID25
=
=
trr

RDS(on) 
(Electrically Isolated Tab)
250V
132A

13m
200ns
D
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
G
S
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25C to 150C
250
V
VDGR
TJ = 25C to 150C, RGS = 1M
250
V
VGSS
VGSM
Continuous
Transient
20
30
V
V
ID25
TC = 25C
132
A
IDM
TC = 25C, Pulse Width Limited by TJM
500
A
IA
EAS
TC = 25C
TC = 25C
90
5
A
J
PD
TC = 25C
570
W
dv/dt
IS  IDM, VDD  VDSS, TJ  150C
20
V/ns
-55 ... +150
150
-55 ... +150
C
C
C
300
260
°C
°C
2500
V~
50..200 / 11..45
N/lb
8
g
TJ
TJM
Tstg
TL
TSOLD
Maximum Lead Temperature for Soldering
Plastic Body for 10s
VISOL
50/60 Hz, 1 Minute
FC
Mounting Force
Weight
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 3mA
250
VGS(th)
VDS = VGS, ID = 8mA
3.0
IGSS
VGS = 20V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
RDS(on)
Note 2, TJ = 125C
VGS = 10V, ID = 90A, Note 1
© 2014 IXYS CORPORATION, All Rights Reserved
Isolated Tab
D
S
G
G = Gate
S = Source
D = Drain
Features
Silicon Chip on Direct-Copper Bond
(DCB) Substrate

Isolated Substrate
- Excellent Thermal Transfer
- Increased Temperature and Power
Cycling Capability
- High Isolation Voltage (2500V~)

Very High Current Handling
Capability

Fast Intrinsic Diode

Avalanche Rated

Very Low RDS(on)

Advantages

V
5.0
V
200
nA
50 A
2.5 mA
13 m


Easy to Mount
Space Savings
High Power Density
Applications



DC-DC Converters and Off-Line UPS
Primary-Side Switch
High Speed Power Switching
Applications
DS100438A(9/14)
MMIX1F180N25T
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
Characteristic Values
Min.
Typ.
Max.
VDS = 10V, ID = 60A, Note 1
90
150
S
23.8
nF
2070
pF
47
pF
1.1

35
ns
52
ns
88
ns
20
ns
364
nC
137
nC
60
nC
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
RGI
td(on)
tr
td(off)
tf
Gate Input Resistance
Resistive Switching Times
VGS = 15V, VDS = 0.5 • VDSS, ID = 90A
RG = 1 (External)
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 90A
Qgd
0.22 C/W
RthJC
0.05
30
RthCS
RthJA
C/W
C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min. Typ.
Max.
IS
VGS = 0V
180
A
ISM
Repetitive, Pulse Width Limited by TJM
720
A
VSD
IF = 60A, VGS = 0V, Note 1
1.3
V
trr
IRM
IF = 90A, VGS = 0V
QRM
Notes:
-di/dt = 100A/s
VR = 75V
11
200 ns
A
0.77
μC
1. Pulse test, t  300μs, duty cycle, d  2%.
2. Part must be heatsunk for high-temp IDSS measurement.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
MMIX1F180N25T
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
180
350
VGS = 10V
8V
160
VGS = 10V
8V
300
140
7V
7V
250
I D - Amperes
I D - Amperes
120
100
80
6V
200
150
60
6V
100
40
50
20
5V
5V
0
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0
4
6
8
10
12
VDS - Volts
Fig. 3. Output Characteristics @ TJ = 125ºC
Fig. 4. RDS(on) Normalized to ID = 90A Value vs.
Junction Temperature
180
2.6
VGS = 10V
8V
7V
160
2.4
VGS = 10V
2.2
120
RDS(on) - Normalized
140
I D - Amperes
2
VDS - Volts
6V
100
80
60
2.0
1.8
I D = 180A
1.6
I D = 90A
1.4
1.2
1.0
40
5V
0.8
20
0.6
4V
0.4
0
0
2.4
0.4
0.8
1.2
1.6
2
2.4
3.2
3.6
-50
4
-25
0
25
50
75
100
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 90A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
140
VGS = 10V
2.2
125
150
120
TJ = 125ºC
2.0
100
1.8
I D - Amperes
RDS(on) - Normalized
2.8
1.6
1.4
60
40
TJ = 25ºC
1.2
80
20
1.0
0.8
0
0
50
100
150
200
I D - Amperes
© 2014 IXYS CORPORATION, All Rights Reserved
250
300
350
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
125
150
MMIX1F180N25T
Fig. 7. Input Admittance
Fig. 8. Transconductance
280
200
TJ = - 40ºC
180
240
160
200
g f s - Siemens
I D - Amperes
140
120
100
TJ = 125ºC
80
25ºC
25ºC
160
125ºC
120
- 40ºC
60
80
40
40
20
0
0
3.4
3.8
4.2
4.6
5.0
5.4
5.8
6.2
0
6.6
20
40
60
VGS - Volts
100
120
140
160
180
200
Fig. 10. Gate Charge
Fig. 9. Forward Voltage Drop of Intrinsic Diode
10
300
VDS = 125V
9
250
I D = 90A
8
I G = 10mA
7
VGS - Volts
200
I S - Amperes
80
I D - Amperes
150
TJ = 125ºC
100
6
5
4
3
TJ = 25ºC
2
50
1
0
0
0
0.2
0.4
0.6
0.8
1
1.2
0
1.4
50
100
Fig. 11. Capacitance
200
250
300
350
Fig. 12. Forward-Bias Safe Operating Area
1,000
100,000
f = 1 MHz
RDS(on) Limit
Ciss
10,000
25µs
- Amperes
100
Coss
100µs
D
1,000
I
Capacitance - PicoFarads
150
QG - NanoCoulombs
VSD - Volts
10
100
TJ = 150ºC
TC = 25ºC
Single Pulse
Crss
10
1ms
1
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10
100
VDS - Volts
1000
MMIX1F180N25T
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
80
80
RG =1Ω , VGS = 15V
70
t r - Nanoseconds
60
t r - Nanoseconds
RG = 1Ω , VGS = 15V
70
VDS = 125V
50
I D = 90A
40
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
30
I D = 180A
VDS = 125V
60
TJ = 125ºC
50
40
TJ = 25ºC
30
20
20
10
0
10
25
35
45
55
65
75
85
95
105
115
90
125
100
110
120
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
tr
240
160
170
80
I D = 180A
120
60
I D = 90A
40
120
td(off) - - - 110
VDS = 125V
I D = 180A
22
100
18
90
I D = 90A
14
40
80
20
0
10
0
1
2
3
4
5
6
7
8
9
25
10
35
45
55
RG - Ohms
tf
24
130
700
120
600
td(off) - - - -
RG = 1Ω, VGS = 15V
100
TJ = 25ºC
18
90
16
80
14
120
130
140
150
I D - Amperes
© 2014 IXYS CORPORATION, All Rights Reserved
160
170
70
180
t f - Nanoseconds
TJ = 125ºC
20
110
85
95
105
115
70
125
tf
560
td(off) - - - -
480
TJ = 125ºC, VGS = 15V
VDS = 125V
500
400
400
320
I D = 180A
300
240
I D = 90A
200
160
100
80
0
0
1
2
3
4
5
6
RG - Ohms
7
8
9
10
t d ( o f f ) - Nanoseconds
110
t d ( o f f ) - Nanoseconds
22
100
75
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
VDS = 125V
90
65
TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
26
t f - Nanoseconds
180
t d ( o f f ) - Nanoseconds
100
80
150
RG = 1Ω, VGS = 15V
26
VDS = 125V
160
tf
120
t d ( o n ) - Nanoseconds
t r - Nanoseconds
td(on) - - - -
TJ = 125ºC, VGS = 15V
200
140
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
30
140
t f - Nanoseconds
280
130
I D - Amperes
MMIX1F180N25T
Fig. 19. Maximum Transient Thermal Impedance
Z (th)JC - ºC / W
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_180N25T (9E-N25) 9-18-14-A
MMIX1F180N25T
Package Outline
PIN:
© 2014 IXYS CORPORATION, All Rights Reserved
1
= Gate
5-12 = Source
13-24 = Drain