Advance Technical Information IXFK360N15T2 IXFX360N15T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 150V 360A Ω 4.0mΩ 150ns RDS(on) ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ 150 150 V V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 IL(RMS) IDM TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM 360 160 900 A A A IA EAS TC = 25°C TC = 25°C 100 TBD A J PD TC = 25°C 1670 W dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 20 V/ns -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 20..120 /4.5..27 N/lb. 10 6 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) G (TAB) G = Gate S = Source BVDSS VGS = 0V, ID = 3mA 150 VGS(th) VDS = VGS, ID = 8mA 2.5 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 60A, Note 1 5.0 ± 200 z z z z z TJ = 150°C Easy to Mount Space Savings High Power Density V Applications V z z z 50 μA 5 mA z 4.0 mΩ z z z z © 2009 IXYS CORPORATION, All Rights Reserved International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages z nA D = Drain TAB = Drain Features z Characteristic Values Min. Typ. Max. (TAB) S PLUS247 (IXFX) z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) D Synchronous Recification DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS100181(08/09) IXFK360N15T2 IXFX360N15T2 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 140 VDS = 10V, ID = 60A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz td(on) td(off) tf S 47.5 nF pF 665 pF Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 100A RG = 1Ω (External) Qg(on) Qgs 230 3060 Crss tr TO-264 (IXFK) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 50 ns 170 ns 115 ns 265 ns 715 nC 185 nC 200 nC 0.09 RthJC RthCS °C/W °C/W 0.15 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 60A, VGS = 0V, Note 1 trr QRM IRM 360 A 1440 A 1.2 V 150 IF = 160A, -di/dt = 100A/μs VR = 60V, VGS = 0V Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T μC 9.00 A Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 5,049,961 5,063,307 5,187,117 .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS 247TM (IXFX) Outline Dim. 4,931,844 5,017,508 5,034,796 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. ns 0.50 Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 Millimeter Min. Max. 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK360N15T2 IXFX360N15T2 Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ T J = 25ºC @ T J = 25ºC 350 350 VGS = 15V 10V 8V 7V 300 250 250 200 ID - Amperes ID - Amperes VGS = 10V 7V 6V 300 6V 150 100 200 150 5V 100 50 50 5V 4V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 VDS - Volts Fig. 3. Output Characteristics 350 7 8 9 10 3.0 VGS = 10V 8V 7V VGS = 10V 2.6 R DS(on) - Normalized 250 ID - Amperes 6 Fig. 4. RDS(on) Normalized to ID = 180A Value vs. Junction Temperature @ T J = 150ºC 300 5 VDS - Volts 6V 200 5V 150 100 4V 50 2.2 I D = 360A 1.8 I D = 180A 1.4 1.0 0.6 0 0.2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 VDS - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 180A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 180 3.4 VGS = 10V 3.0 160 External Lead Current Limit 2.6 TJ = 175ºC 120 ID - Amperes R DS(on) - Normalized 140 2.2 1.8 100 80 60 1.4 40 TJ = 25ºC 1.0 20 0.6 0 0 50 100 150 200 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 250 300 350 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXFK360N15T2 IXFX360N15T2 Fig. 7. Input Admittance Fig. 8. Transconductance 200 450 180 400 160 120 25ºC g f s - Siemens ID - Amperes 350 TJ = 150ºC 25ºC - 40ºC 140 TJ = - 40ºC 100 80 60 300 250 150ºC 200 150 40 100 20 50 0 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 20 40 60 80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 140 160 180 200 220 Fig. 10. Gate Charge 10 350 VDS = 75V 9 300 I D = 180A 8 250 I G = 10mA 7 VGS - Volts IS - Amperes 100 ID - Amperes 200 150 6 5 4 TJ = 150ºC 3 100 TJ = 25ºC 2 50 1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 100 200 300 VSD - Volts 400 500 600 700 800 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100,000 1,000.0 RDS(on) Limit 25µs 100µs External Lead Limit 100.0 10,000 ID - Amperes Capacitance - PicoFarads Ciss Coss 10.0 1ms 1,000 10ms 1.0 TJ = 175ºC Crss 100ms DC TC = 25ºC f = 1 MHz Single Pulse 0.1 100 0 5 10 15 20 25 30 35 40 VDS - Volts 1 10 100 1,000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF:F_360N15T2(9V)8-19-09 IXFK360N15T2 IXFX360N15T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 300 340 RG = 1Ω , VGS = 10V VDS = 75V 260 260 I D t r - Nanoseconds t r - Nanoseconds RG = 1Ω , VGS = 10V VDS = 75V 300 = 100A 220 180 I 140 D = 200A 220 TJ = 25ºC 180 TJ = 125ºC 140 100 60 100 25 35 45 55 65 75 85 95 105 115 40 125 60 80 100 TJ - Degrees Centigrade VDS = 75V 400 600 150 500 120 300 90 200 60 I D = 100A 100 30 0 2 3 4 5 6 7 8 9 td(off) - - - - VDS = 75V 180 400 160 I D = 200A 200 120 100 100 25 10 35 45 RG = 1Ω, VGS = 10V 75 85 95 105 115 80 125 180 TJ = 125ºC ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 600 600 I D = 200A, 100A 300 300 120 200 200 100 200 100 TJ = 25ºC 180 700 400 140 160 VDS = 75V 700 400 200 140 800 500 160 0 td(off) - - - - TJ = 125ºC, VGS = 10V 500 300 100 tf 800 220 200 900 100 1 2 3 4 5 6 RG - Ohms 7 8 9 10 t d(off) - Nanoseconds VDS = 75V 500 120 65 900 t f - Nanoseconds td(off) - - - - t d(off) - Nanoseconds t f - Nanoseconds 600 100 55 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 240 tf 80 140 TJ - Degrees Centigrade 700 60 I D = 100A 300 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 40 200 RG = 1Ω, VGS = 10V RG - Ohms 400 200 220 tf 0 0 1 180 t d(off) - Nanoseconds I D = 200A 180 t d(on) - Nanoseconds t r - Nanoseconds td(on) - - - - TJ = 125ºC, VGS = 10V 500 160 700 210 t f - Nanoseconds 700 tr 140 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 600 120 ID - Amperes IXFK360N15T2 IXFX360N15T2 Fig. 19. Maximum Transient Thermal Impedance 1.000 Fig. 19. Maximium Transient Thermal Impedance .sadgsfgsf 0.200 Z (th)JC - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF:F_360N15T2(9V)8-19-09