Preliminary Technical Information MMIX1F230N20T GigaMOSTM TrenchTM HiperFETTM Power MOSFET VDSS ID25 = = trr RDS(on) (Electrically Isolated Tab) 200V 156A 8.3m 200ns D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 200 V VDGR TJ = 25C to 175C, RGS = 1M 200 V VGSS VGSM Continuous Transient 20 30 V V ID25 TC = 25C 156 A IDM TC = 25C, Pulse Width Limited by TJM 630 A IA EAS TC = 25C TC = 25C 100 5 A J PD TC = 25C 600 W dv/dt IS IDM, VDD VDSS, TJ 175C 20 V/ns -55 ... +175 175 -55 ... +175 C C C 300 260 C C 2500 V~ 50..200 / 11..45 N/lb. 8 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force Weight Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS 200 VGS = 0V, ID = 3mA VGS(th) VDS = VGS, ID = 8mA IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) 3.0 Note 2, TJ = 150C VGS = 10V, ID = 60A, Note 1 © 2014 IXYS CORPORATION, All Rights Reserved Isolated Tab D S G G = Gate S = Source D = Drain Features Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Substrate - Excellent Thermal Transfer - Increased Temperature and Power Cycling Capability - High Isolation Voltage (2500V~) 175°C Operating Temperature Very High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Very Low RDS(on) Advantages V 5.0 V 200 nA 50 A 3 mA 8.3 m Easy to Mount Space Savings High Power Density Applications DC-DC Converters and Off-Line UPS Primary-Side Switch High Speed Power Switching Applications DS100433A(04/14) MMIX1F230N20T Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 90 VDS = 10V, ID = 60A, Note 1 150 S 24 nF Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 2440 pF 60 pF 1.15 58 ns 38 ns 62 ns 17 ns 358 nC Crss RGi td(on) tr td(off) tf Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = ID = 0.5 • ID25 RG = 1 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 138 nC 60 nC Qgd RthJC 0.25C/W RthCS 0.15C/W RthJA 30C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 230 A ISM Repetitive, Pulse Width Limited by TJM 920 A VSD IF = 60A, VGS = 0V, Note 1 1.3 V trr QRM IF = 115A, VGS = 0V IRM Notes: -di/dt = 100A/s VR = 75V 0.74 200 ns μC 10.6 A 1. Pulse test, t 300μs, duty cycle, d 2%. 2. Part must be heatsunk for high-temp Ices measurement. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 MMIX1F230N20T Package Outline PIN: © 2014 IXYS CORPORATION, All Rights Reserved 1 = Gate 5-12 = Source 13-24 = Drain MMIX1F230N20T Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristis @ TJ = 25ºC 350 240 VGS = 15V 10V 8V 200 VGS = 15V 10V 8V 300 7V I D - Amperes I D - Amperes 250 7V 160 120 6V 80 200 150 100 40 6V 50 5V 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 1 2 3 VDS - Volts 3.0 240 VGS = 15V 10V 8V 6 7 8 9 VGS = 10V 2.6 7V RDS(on) - Normalized I D - Amperes 5 Fig. 4. RDS(on) Normalized to ID = 115A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 150ºC 200 4 VDS - Volts 160 6V 120 80 40 2.2 I D = 230A 1.8 I D = 115A 1.4 1.0 0.6 5V 0 0.2 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -50 -25 0 VDS - Volts 75 100 125 150 175 Fig. 6. Drain Current vs. Case Temperature 180 VGS = 10V 3.0 50 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 115A Value vs. Drain Current 3.4 25 160 TJ = 175ºC 120 I D - Amperes R DS(on) - Normalized 140 2.6 2.2 1.8 100 80 60 1.4 TJ = 25ºC 40 1.0 20 0.6 0 0 50 100 150 200 250 300 350 I D - Amperes IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 MMIX1F230N20T Fig. 8. Transconductance Fig. 7. Input Admittance 280 200 TJ = - 40ºC 180 240 160 200 120 100 TJ = 150ºC 80 25ºC g f s - Siemens I D - Amperes 140 25ºC 160 150ºC 120 60 80 - 40ºC 40 40 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 20 40 60 80 VGS - Volts 120 140 160 180 200 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 300 VDS = 100V 9 250 I D = 115A 8 I G = 10mA 7 200 VGS - Volts I S - Amperes 100 I D - Amperes 150 100 6 5 4 3 TJ = 150ºC 2 TJ = 25ºC 50 1 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 40 80 Fig. 11. Capacitance 160 200 240 280 320 360 Fig. 12. Forward-Bias Safe Operating Area 100,000 1,000 f = 1 MHz RDS(on) Limit 25µs Ciss 10,000 100 I D - Amperes Capacitance - PicoFarads 120 QG - NanoCoulombs VSD - Volts C oss 1,000 100µs 10 100 TJ = 175ºC 1ms TC = 25ºC Single Pulse C rss 10 1 0 5 10 15 20 25 VDS - Volts © 2014 IXYS CORPORATION, All Rights Reserved 30 35 40 1 10 100 VDS - Volts 1,000 MMIX1F230N20T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 43 43 RG = 1Ω, VGS = 10V 42 RG = 1Ω, VGS = 10V 42 VDS = 100V VDS = 100V 41 t r - Nanoseconds 41 t r - Nanoseconds Fig. 14. Resistive Turn-on Rise Time vs. Drain Current I D = 230A 40 39 I D = 115A 38 TJ = 125ºC 40 39 38 37 37 36 36 TJ = 25ºC 35 35 25 35 45 55 65 75 85 95 105 115 110 125 120 130 140 150 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance tr 700 VDS = 50V 600 30 180 28 160 500 140 400 120 I D = 115A 300 100 200 80 100 60 0 4 5 6 7 8 9 tf I D = 115A 20 50 18 40 35 45 55 160 170 75 85 95 105 115 30 125 900 tf t f - Nanoseconds 420 td(off) - - - - 380 TJ = 125ºC, VGS = 10V VDS = 100V 340 I D = 130A 600 300 500 260 I D = 115A 400 220 300 180 200 140 100 100 50 180 190 200 210 220 40 230 I D - Amperes IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0 60 3 4 5 6 7 RG - Ohms 8 9 10 t d(off) - Nanoseconds 80 12 150 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 700 TJ = 25ºC 140 70 60 800 60 130 80 22 VDS = 100V 20 120 100 I D = 230A 90 70 110 230 90 VDS = 100V 25 t d(off) - Nanoseconds t f - Nanoseconds td(off) - - - - 24 16 220 td(off) - - - - 16 100 RG = 1Ω, VGS = 10V TJ = 125ºC 210 TJ - Degrees Centigrade tf 28 200 24 10 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 32 190 RG = 1Ω, VGS = 10V RG - Ohms 36 180 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 26 40 3 170 t d(off) - Nanoseconds I D = 230A t d(on) - Nanoseconds t r - Nanoseconds td(on) - - - - TJ = 125ºC, VGS = 10V 200 t f - Nanoseconds 800 160 I D - Amperes MMIX1F230N20T Fig. 19. Maximum Transient Thermal Impedance 1 Z (th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2014 IXYS CORPORATION, All Rights Reserved IXYS REF: MMIX1F230N20T (9E)12-22-11