Advance Technical Information IXFB132N50P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ 500V 132A Ω 39mΩ 250ns PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 132 A IDM TC = 25°C, Pulse Width Limited by TJM 330 A IA EAS TC = 25°C TC = 25°C 66 3 A J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 35 V/ns PD TC = 25°C 1890 W -55 ... +150 150 -55 ... +150 °C °C °C TJ TJM Tstg G D S G = Gate S = Source 1.6mm (0.062 in.) from Case for 10s 300 °C TSOLD Plastic Body for 10s 260 °C FC Mounting Force 30..120/6.7..27 N/lb. 10 g Weight D = Drain Tab = Drain Features z z z TL Tab z Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages z z Easy to Mount Space Savings Applications z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 500 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • IDSS, Note 1 z V 5.0 V ±200 nA TJ = 125°C © 2011 IXYS CORPORATION, All Rights Reserved z z z DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications 50 μA 6 mA 39 mΩ DS100315(03/11) IXFB132N50P3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 68 VDS = 10V, ID = 66A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf Qgs 115 S 18.6 nF 1750 pF 5.0 pF 1.0 Ω 44 ns 9 ns 72 ns 8 ns 250 nC 90 nC 52 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS RG = 1Ω (External) Qg(on) PLUS264TM (IXFB) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS Qgd 0.066 °C/W RthJC RthCS 0.13 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 132 A ISM Repetitive, Pulse Width Limited by TJM 530 A VSD IF = 100A, VGS = 0V, Note 1 1.5 V trr QRM IRM Note IF = 66A, -di/dt = 100A/μs 1.9 16.4 VR = 100V, VGS = 0V 250 ns μC A 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFB132N50P3 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 140 250 VGS = 10V 8V 120 VGS = 10V 8V 200 7V 7V ID - Amperes ID - Amperes 100 80 6V 60 150 100 40 6V 50 20 5V 5V 0 0 0 1 2 3 4 5 0 6 5 10 20 25 Fig. 4. RDS(on) Normalized to ID = 66A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 140 3.2 VGS = 10V 8V 7V VGS = 10V 2.8 R DS(on) - Normalized 120 100 ID - Amperes 15 VDS - Volts VDS - Volts 6V 80 60 40 2.4 I D = 132A 2.0 I D = 66A 1.6 1.2 5V 20 0.8 4V 0 0.4 0 2 4 6 8 10 12 14 -50 0 25 50 75 100 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 66A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 140 3.0 VGS = 10V TJ = 125ºC 2.6 120 100 2.2 ID - Amperes R DS(on) - Normalized -25 VDS - Volts 1.8 80 60 1.4 40 TJ = 25ºC 1.0 20 0.6 0 0 50 100 150 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 200 250 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFB132N50P3 Fig. 7. Input Admittance Fig. 8. Transconductance 200 200 180 180 TJ = - 40ºC 160 160 TJ = 125ºC 25ºC - 40ºC 120 25ºC 140 g f s - Siemens ID - Amperes 140 100 80 120 125ºC 100 80 60 60 40 40 20 20 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 7.5 20 40 VGS - Volts 80 100 120 140 160 180 200 220 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 350 10 VDS = 250V 9 300 I D = 66A 8 250 I G = 10mA 7 VGS - Volts IS - Amperes 60 200 150 TJ = 125ºC 100 6 5 4 3 2 TJ = 25ºC 50 1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 50 VSD - Volts 100 150 200 250 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1000 100,000 Ciss RDS(on) Limit 100 1,000 100µs ID - Amperes Capacitance - PicoFarads 10,000 Coss 100 10 10 TJ = 150ºC Crss TC = 25ºC Single Pulse f = 1 MHz 1 1ms 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFB132N50P3 Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: F_132N50P3(K9)03-17-11