Advance Technical Information IXFK74N50P2 IXFX74N50P2 PolarP2TM HiPerFETTM Power MOSFET VDSS ID25 = = 500V 74A Ω 77mΩ 250ns RDS(on) ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 500 500 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25°C TC = 25°C, Pulse Width Limited by TJM 74 185 A A IA EAS TC = 25°C TC = 25°C 74 3 A J PD TC = 25°C 1400 W dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 30 V/ns -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. z 20..120 /4.5..27 N/lb. z 10 6 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) G D S Tab PLUS247 (IXFX) G D Tab S G = Gate S = Source D = Drain Tab = Drain Features z z z z z International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Diode Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance Advantages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 4mA 3.0 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125°C z z V 5.0 V ± 100 nA Applications z z 10 μA 1.5 mA z 77 z mΩ z z © 2010 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications DS100252(03/10) IXFK74N50P2 IXFX74N50P2 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 40 VDS = 10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 65 S 9900 pF 1015 pF 70 pF 1.9 Ω 25 ns 11 ns 60 ns 11 ns 165 nC 44 nC 67 nC Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs TO-264 Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.089 °C/W RthJC RthCS °C/W 0.15 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr QRM IRM 74 A 296 A 1.4 V 250 IF = 37A, -di/dt = 100A/μs VR = 80V, VGS = 0V Terminals: 1 - Gate 2 - Drain 3 - Source 4 - Drain Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. Inches Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS247TM Outline ns 1.3 μC 13.0 A Terminals: 1 - Gate 2 - Drain 3 - Source Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Dim. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK74N50P2 IXFX74N50P2 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 160 80 VGS = 10V VGS = 10V 7V 70 140 50 6V 40 30 20 100 80 6V 60 40 10 20 5V 0 5V 0 0 1 2 3 4 5 6 7 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = 37A Value vs. Junction Temperature 80 3.4 VGS = 10V 7V 70 R DS(on) - Normalized 6V 50 40 30 VGS = 10V 3.0 60 ID - Amperes 7V 120 ID - Amperes ID - Amperes 60 5V 20 2.6 I D = 74A 2.2 I D = 37A 1.8 1.4 1.0 10 0.6 4V 0 0.2 0 2 4 6 8 10 12 14 16 -50 0 25 50 75 100 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 37A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 80 3.4 VGS = 10V 70 3.0 TJ = 125ºC 60 2.6 ID - Amperes R DS(on) - Normalized -25 VDS - Volts 2.2 1.8 50 40 30 TJ = 25ºC 1.4 20 1.0 10 0.6 0 0 20 40 60 80 100 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 120 140 160 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFK74N50P2 IXFX74N50P2 Fig. 7. Input Admittance Fig. 8. Transconductance 100 120 TJ = - 40ºC 90 100 80 ID - Amperes 70 60 g f s - Siemens TJ = 125ºC 25ºC - 40ºC 50 40 30 20 80 25ºC 60 125ºC 40 20 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 10 20 30 40 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 60 70 80 90 100 160 180 Fig. 10. Gate Charge 240 10 VDS = 250V 9 I D = 37A 200 8 I G = 10mA 7 VGS - Volts 160 IS - Amperes 50 ID - Amperes 120 80 TJ = 125ºC 6 5 4 3 TJ = 25ºC 2 40 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 20 40 VSD - Volts 60 80 100 120 140 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 100,000 0.100 f = 1 MHz Z (th)JC - ºC / W Capacitance - PicoFarads Ciss 10,000 1,000 Coss 0.010 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXF_74N50P2 (83)3-05-10