HiPerFASTTM IGBTs C2-Class High Speed w/ Diode VCES = IC110 = VCE(sat) ≤ tfi(typ) = IXGA16N60C2D1 IXGP16N60C2D1 IXGH16N60C2D1 600V 16A 3.0V 33ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 IF110 ICM TC TC TC TC 40 16 11 100 A A A A SSOA (RBSOA) VGE = 15V, TJ = 125°C, RG = 22Ω Clamped Inductive load ICM = 32 VCE ≤ VCES A PC TC = 25°C 150 W -55 ... +150 150 -55 ... +150 °C °C °C 1.13/10 10..65 / 2.2..14.6 Nm/lb.in. N/lb. = 25°C = 110°C = 110°C = 25°C, 1ms TJ TJM Tstg Md FC Mounting Torque (TO-220 & TO-247) Mounting Force (TO-263) TL TSOLD Maximum Lead Temperature for Soldering 1.6mm (0.062 in.) from Case for 10s Weight °C °C 300 260 TO-263 TO-220 TO-247 2.5 3.0 6.0 g g g TO-220AB (IXGP) G CE C (Tab) TO-247 (IXGH) G C D C (Tab) E S G = Gate E = Emitter C = Collector Tab = Collector Features z z z z Optimized for Low Switching Losses Square RBSOA Anti-Parallel Ultra Fast Diode International Standard Packages Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th) IC ICES VCE = VCES, VGE = 0V = 250μA, VCE = VGE 3.0 5.5 VCE = 0V, VGE = ±20V VCE(sat) IC z V 25 μA 1 mA TJ = 125°C IGES z Characteristic Values Min. Typ. Max. ±100 nA = 12A, VGE = 15V, Note1 3.0 TJ = 125°C 1.8 V V Applications z z z z z z z z © 2010 IXYS CORPORATION, All Rights Reserved High Power Density Low Gate Drive Requirement Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS99179B(08/10) IXGA16N60C2D1 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs IC = 12A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz 8 S Qg(on) Qge Inductive load, TJ = 25°C IC = 12A, VGE = 15V VCE = 400V, RG = 22Ω Note 2 Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK 657 72 22 pF pF pF 25 nC IC = 12A, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tri Eon td(off) tfi IXGP16N60C2D1 IXGH16N60C2D1 Inductive load, TJ = 125°C IC = 12A, VGE = 15V VCE = 400V, RG = 22Ω Note 2 TO-220 TO-247 5 nC 13 nC 16 17 0.16 75 33 ns ns mJ ns ns 0.09 0.16 mJ 16 18 0.27 115 100 0.27 ns ns mJ ns ns mJ 0.50 0.21 0.83 °C/W °C/W °C/W Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VF IRM trr trr IF = 10A, VGE = 0V, Note 1 Characteristic Values Min. Typ. Max. TJ = 125°C 1.7 3.0 V V IF = 12A, VGE = 0V, -diF/dt = 100A/μs, VR = 100V, TJ = 125°C 2.5 A 110 ns 30 ns IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V RthJC Notes: 2.5 °C/W 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGA16N60C2D1 TO-220 (IXGP) Outline TO-263 (IXGA) Outline 1. 2. 3. 4. IXGP16N60C2D1 IXGH16N60C2D1 TO-247 (IXGH) AD Outline Gate Collector Emitter Collector Bottom Side Dim. Millimeter Min. Max. Inches Min. Max. A b b2 4.06 0.51 1.14 4.83 0.99 1.40 .160 .020 .045 .190 .039 .055 c c2 0.40 1.14 0.74 1.40 .016 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .280 .380 .320 E 9.65 10.41 .380 .405 E1 e L L1 L2 L3 L4 6.22 2.54 14.61 2.29 1.02 1.27 0 8.13 BSC 15.88 2.79 1.40 1.78 0.13 .270 .100 .575 .090 .040 .050 0 .320 BSC .625 .110 .055 .070 .005 © 2010 IXYS CORPORATION, All Rights Reserved Pins: 1 - Gate 3 - Emitter 2 - Collector 1 = Gate 2 = Collector 3 = Emitter IXGA16N60C2D1 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 24 20 110 11V VGE = 15V 13V 12V 100 80 16 12 IC - Amperes IC - Amperes VGE = 15V 90 10V 9V 8 8V 14V 70 13V 60 12V 50 11V 40 30 10V 20 4 7V 0.0 0.5 1.0 1.5 2.0 2.5 9V 10 6V 0 8V 7V 0 3.0 3.5 0 5 10 15 20 25 30 125 150 VCE - Volts VCE - Volts Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 1.4 24 VGE = 15V 13V 12V 11V VGE = 15V 1.3 10V VCE(sat) - Normalized 20 IC - Amperes IXGP16N60C2D1 IXGH16N60C2D1 16 9V 12 8 8V 4 7V 1.2 I C = 24A I C = 12A 1.1 1.0 0.9 0.8 0.7 I 6V C = 6A 0.6 0 0 0.5 1 1.5 2 2.5 3 0 3.5 25 50 VCE - Volts 75 100 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 35 6.0 TJ = 25ºC 5.5 30 5.0 25 IC - Amperes VCE - Volts 4.5 4.0 3.5 I C = 24A 3.0 20 TJ = - 40ºC 25ºC 125ºC 15 10 12A 2.5 5 2.0 6A 1.5 0 7 8 9 10 11 12 13 14 15 VGE - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 4 5 6 7 8 VGE - Volts 9 10 11 IXGA16N60C2D1 Fig. 7. Transconductance Fig. 8. Gate Charge 16 16 TJ = - 40ºC VCE = 300V 14 12 25ºC 12 10 125ºC 10 VGE - Volts g f s - Siemens 14 8 6 I C = 12A I G = 10mA 8 6 4 4 2 2 0 0 0 5 10 15 20 25 30 0 35 4 8 12 16 20 24 28 QG - NanoCoulombs IC - Amperes Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 35 10,000 f = 1 MHz 30 25 Cies 1,000 IC - Amperes Capacitance - PicoFarads IXGP16N60C2D1 IXGH16N60C2D1 Coes 100 20 15 10 Cres TJ = 125ºC 5 0 100 10 0 5 10 15 20 25 30 35 40 RG = 22Ω dv / dt < 10V / ns 150 200 250 VCE - Volts 300 350 400 450 500 550 600 650 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds © 2010 IXYS CORPORATION, All Rights Reserved 0.1 1 10 IXGA16N60C2D1 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 0.9 --- TJ = 125ºC , VGE = 15V VCE = 400V 0.7 1.4 0.6 1.2 1 0.5 0.8 0.4 0.6 0.3 0.4 I C 20 30 40 50 60 70 80 0.5 0.4 TJ = 125ºC 0.3 0.1 0.1 0 0 12 13 14 15 16 17 I C = 24A 0.7 125 0.6 120 0.5 0.5 0.4 0.4 0.3 0.3 0.2 I C = 12A 0.1 0 25 35 45 55 65 75 85 95 105 115 tfi td(off) - - - - VCE = 400V 115 240 110 I C 105 I 90 20 140 160 130 140 120 120 60 80 70 TJ = 25ºC 20 60 0 50 19 20 21 22 23 24 IC - Amperes IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. t f i - Nanoseconds t f i - Nanoseconds 100 18 160 = 12A 80 90 17 C 95 80 16 200 = 24A 0.1 110 TJ = 125ºC 15 280 30 40 50 60 70 80 40 100 90 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature tfi td(on) - - - - 130 120 RG = 22Ω , VGE = 15V VCE = 400V 110 100 100 I C = 24A, 12A 80 90 60 80 40 70 20 60 0 25 35 45 55 65 75 85 TJ - Degrees Centigrade 95 105 115 50 125 t d(off) - Nanoseconds 120 14 320 120 t d(off) - Nanoseconds VCE = 400V 13 24 RG - Ohms tfi 12 td(off) - - - - TJ = 125ºC, VGE = 15V RG = 22Ω , VGE = 15V 40 23 100 0 125 180 100 22 0.2 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 140 21 360 TJ - Degrees Centigrade 160 20 t d(off) - Nanoseconds 130 t f i - Nanoseconds VCE = 400V 0.8 Eon - MilliJoules Eoff - MilliJoules ---- RG = 22Ω , VGE = 15V 0.6 19 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 0.8 Eon 18 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff 0.2 TJ = 25ºC RG - Ohms 0.7 0.6 VCE = 400V 0.2 0 100 90 ---- 0.3 0.2 0.1 Eon RG = 22Ω , VGE = 15V 0.4 = 12A 0.2 Eoff 0.7 Eon - MilliJoules 0.6 Fig. 13. Inductive Switching Energy Loss vs. Collector Current 0.5 Eon - MilliJoules I C = 24A Eoff - MilliJoules 0.7 Eoff - MilliJoules Eon - Eoff 0.8 1.6 IXGP16N60C2D1 IXGH16N60C2D1 IXGA16N60C2D1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 90 50 55 tri 80 td(on) - - - - 45 = 24A 45 40 60 40 50 35 40 30 30 I C 25 = 12A t r i - Nanoseconds C t d(on) - Nanoseconds t r i - Nanoseconds I VCE = 400V 16.5 20 16.0 15.5 15 10 100 10 50 60 70 80 90 17.5 TJ = 25ºC, 125ºC 25 15 40 18.0 17.0 10 30 VCE = 400V 30 20 20 18.5 RG = 22Ω , VGE = 15V 35 20 0 td(on) - - - - t d(on) - Nanoseconds 50 19.0 tri TJ = 125ºC, VGE = 15V 70 IXGP16N60C2D1 IXGH16N60C2D1 15.0 12 13 14 15 16 17 18 19 20 21 22 23 24 IC - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 55 19.5 tri 50 45 VCE = 400V 40 19.0 18.5 18.0 I 35 C = 24A 17.5 30 17.0 25 16.5 20 16.0 I C = 12A 15 15.5 10 25 35 45 55 65 t d(on) - Nanoseconds t r i - Nanoseconds td(on) - - - - RG = 22Ω , VGE = 15V 75 85 95 105 115 15.0 125 TJ - Degrees Centigrade © 2010 IXYS CORPORATION, All Rights Reserved IXYS REF: IXG_16N60C3D1(3D)7-29-10