IXYS IXGK50N120C3H1

Advance Technical Information
GenX3TM 1200V IGBTs
w/ Diode
IXGK50N120C3H1
IXGX50N120C3H1
High-Speed PT IGBTs
for 20 - 50 kHz Switching
Symbol
Test Conditions
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
VGES
VGEM
VCES =
IC100 =
VCE(sat) ≤
tfi(typ) =
1200V
50A
4.2V
64ns
TO-264 (IXGK)
Maximum Ratings
G
C
1200
1200
V
V
Continuous
Transient
±20
±30
V
V
IC25
IC100
ICM
TC = 25°C ( Chip Capability )
TC = 100°C
TC = 25°C, 1ms
95
50
240
A
A
A
IA
EAS
TC = 25°C
TC = 25°C
40
750
A
mJ
SSOA
(RBSOA)
VGE = 15V, TJ = 125°C, RG = 3Ω
Clamped Inductive Load
ICM = 100
VCE ≤ VCES
A
PC
TC = 25°C
460
W
G = Gate
C = Collector
-55 ... +150
150
-55 ... +150
°C
°C
°C
Features
300
260
°C
°C
1.13/10
20..120/4.5..14.6
Nm/lb.in.
N/lb.
10
6
g
g
TJ
TJM
Tstg
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10
Md
FC
Mounting Torque ( IXGK )
Mounting Force ( IXGX )
Weight
TO-264
PLUS247
E
E
(TAB)
PLUS247TM (IXGX)
G
z
z
z
z
z
C
E
(TAB)
E
= Emitter
TAB = Collector
Optimized for Low Switching Losses
Square RBSOA
High Avalanche Capability
Anti-Parallel Ultra Fast Diode
International Standard Packages
Advantages
z
z
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VGE(th)
IC
= 250μA, VCE = VGE
ICES
VCE = VCES, VGE= 0V
Characteristic Values
Min.
Typ.
Max.
3.0
TJ = 125°C, Note 1
IGES
VCE = 0V, VGE = ±20V
VCE(sat)
IC
= 40A, VGE = 15V, Note 2
TJ = 125°C
2.6
Applications
5.0
V
250
14
μA
mA
±100
nA
4.2
V
V
z
z
z
z
z
z
z
z
© 2009 IXYS CORPORATION, All Rights Reserved
High Power Density
Low Gate Drive Requirement
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
DS100163(06/09)
IXGK50N120C3H1
IXGX50N120C3H1
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
Cies
Coes
Cres
Characteristic Values
Min.
Typ.
Max.
IC = 40A, VCE = 10V, Note 2
24
VCE = 25V, VGE = 0V, f = 1MHz
Qg
Qge
IC = 50A, VGE = 15V, VCE = 0.5 • VCES
Qgc
td(on)
tri
Eon
td(off)
tfi
Inductive load, TJ = 25°C
IC = 40A, VGE = 15V
VCE = 0.5 • VCES, RG = 2Ω
Note 3
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
40
S
4250
455
120
pF
pF
pF
196
nC
24
nC
84
nC
31
36
2.0
123
64
ns
ns
mJ
ns
ns
0.63
Inductive load, TJ = 125°C
IC = 40A, VGE = 15V
VCE = 0.5 • VCES, RG = 2Ω
Note 3
RthJC
RthCK
TO-264 (IXGK) Outline
1.2
mJ
23
37
3.0
170
315
2.1
ns
ns
mJ
ns
ns
mJ
0.15
0.27 °C/W
°C/W
PLUS247TM (IXGX) Outline
Reverse Diode (FRED)
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VF
IF = 50A, VGE = 0V, Note 1
IRM
trr
Characteristic Values
Min.
Typ.
Max.
2.1
TJ = 125°C
IF = 50A, VGE = 0V,
-diF/dt = 2500A/μs, VR = 800V
2.4
2.3
V
V
50
A
75
ns
RthJC
0.30 °C/W
Notes:
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
Dim.
1. Part must be heatsunk for high-temp ICES measurement.
2. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
3. Switching times & energy loses may increase for higher VCE(Clamp), TJ or RG.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXGK50N120C3H1
IXGX50N120C3H1
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
275
100
VGE = 15V
13V
11V
90
80
225
9V
IC - Amperes
60
7V
50
11V
200
70
IC - Amperes
VGE = 15V
13V
250
40
30
175
9V
150
125
100
7V
75
20
50
10
25
5V
0
5V
0
0
1
2
3
4
5
6
0
3
6
9
15
18
21
24
27
30
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
100
1.3
VGE = 15V
13V
11V
90
80
VGE = 15V
1.2
VCE(sat) - Normalized
9V
70
IC - Amperes
12
VCE - Volts
VCE - Volts
60
7V
50
40
30
1.1
I
C
= 100A
I
C
= 50A
I
C
= 25A
1.0
0.9
0.8
0.7
20
5V
10
0.6
0
0.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
25
50
75
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
125
150
Fig. 6. Input Admittance
90
8.0
7.5
80
TJ = 25ºC
7.0
70
IC - Amperes
6.5
VCE - Volts
100
TJ - Degrees Centigrade
6.0
I
5.5
C
= 100A
5.0
60
50
TJ = 125ºC
25ºC
- 40ºC
40
30
4.5
50A
20
4.0
10
3.5
25A
3.0
0
5
6
7
8
9
10
11
VGE - Volts
© 2009 IXYS CORPORATION, All Rights Reserved
12
13
14
15
4.0
4.5
5.0
5.5
6.0
VGE - Volts
6.5
7.0
7.5
IXGK50N120C3H1
IXGX50N120C3H1
Fig. 8. Gate Charge
Fig. 7. Transconductance
16
60
TJ = - 40ºC
VCE = 600V
14
50
I C = 50A
VGE - Volts
g f s - Siemens
12
I G = 10mA
25ºC
40
125ºC
30
20
10
8
6
4
10
2
0
0
0
10
20
30
40
50
60
70
80
90
0
100
20
40
60
Fig. 9. Capacitance
100
120
140
160
180
200
Fig. 10. Reverse-Bias Safe Operating Area
10,000
Capacitance - PicoFarads
80
QG - NanoCoulombs
IC - Amperes
120
100
Cies
1,000
IC - Amperes
80
Coes
100
60
40
Cres
TJ = 125ºC
20
f = 1 MHz
10
0
5
10
15
20
25
30
35
40
RG = 2Ω
dV / dt < 10V / ns
0
200
400
VCE - Volts
600
800
1000
1200
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
Z (th)JC - ºC / W
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: G_50N120C3H1(7N)6-19-09
IXGK50N120C3H1
IXGX50N120C3H1
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
4.0
11
5.5
5.0
VCE = 600V
---
TJ = 125ºC , VGE = 15V
I
C
3.5
9
3.0
8
= 80A
4.0
7
3.5
6
3.0
5
I C = 40A
2.5
3
4
5
6
7
8
9
10
11
12
13
14
VCE = 600V
6
TJ = 125ºC
2.5
5
2.0
4
1.5
3
1
0
20
15
30
40
I C = 80A
500
9
450
8
400
7
350
2.4
6
2.0
5
1.6
4
I C = 40A
t f i - Nanoseconds
2.8
80
600
tfi
t d(off) - - - -
550
TJ = 125ºC, VGE = 15V
500
VCE = 600V
450
300
400
I
250
C
= 40A
350
200
300
I
150
C = 80A
250
1.2
3
0.8
2
100
200
0.4
1
50
150
0
125
0
0.0
25
35
45
55
65
75
85
95
105
115
100
2
3
4
5
6
7
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
260
t d(off) - - - -
240
RG = 2Ω , VGE = 15V
350
250
180
TJ = 125ºC
160
150
140
100
120
TJ = 25ºC
100
0
80
30
40
50
60
IC - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
12
13
14
15
70
80
t d(off) - - - -
RG = 2Ω , VGE = 15V
250
170
I C = 40A
VCE = 600V
160
200
150
150
I
C
= 80A
140
100
130
50
120
0
25
35
45
55
65
75
85
TJ - Degrees Centigrade
95
105
115
110
125
t d(off) - Nanoseconds
200
20
300
t d(off) - Nanoseconds
300
50
11
180
tf i
220
VCE = 600V
200
10
350
t f i - Nanoseconds
400
9
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
450
tfi
8
RG - Ohms
TJ - Degrees Centigrade
t f i - Nanoseconds
70
t d(off) - Nanoseconds
VCE = 600V
10
Eon - MilliJoules
Eoff - MilliJoules
----
RG = 2Ω , VGE = 15V
3.2
60
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
4.0
3.6
50
IC - Amperes
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
Eon
2
TJ = 25ºC
RG - Ohms
Eoff
7
RG = 2Ω , VGE = 15V
0.0
2
2
----
0.5
3
1.5
Eon
1.0
4
2.0
8
Eoff
Eon - MilliJoules
4.5
10
Eoff - MilliJoules
Eon -
Eoff
Eon - MilliJoules
Eoff - MilliJoules
6.0
IXGK50N120C3H1
IXGX50N120C3H1
Fig. 18. Inductive Turn-on
Switching Times vs. Gate Resistance
Fig. 19. Inductive Turn-on
Switching Times vs. Collector Current
180
tr i
160
t d(on) - - - -
60
100
55
90
TJ = 125ºC, VGE = 15V
C
45
= 80A
100
40
80
35
I C = 40A
t r i - Nanoseconds
I
28
26
50
24
40
22
30
20
20
18
16
40
25
20
20
10
15
0
3
4
5
6
7
8
9
10
11
12
13
14
15
14
20
RG - Ohms
30
TJ = 125ºC, 25ºC
VCE = 600V
60
30
2
32
70
60
0
t d(on) - - - -
t d(on) - Nanoseconds
120
tr i
RG = 2Ω , VGE = 15V
80
50
VCE = 600V
t d(on) - Nanoseconds
t r i - Nanoseconds
140
34
30
40
50
60
70
80
IC - Amperes
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Temperature
140
32
tr i
120
t d(on) - - - 30
RG = 2Ω , VGE = 15V
t r i - Nanoseconds
100
28
I C = 80A
80
26
60
24
I C = 40A
40
t d(on) - Nanoseconds
VCE = 600V
22
20
25
35
45
55
65
75
85
95
105
115
20
125
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: G_50N120C3H1(7N)6-19-09