GenX3TM 600V IGBT High Speed PT IGBTs for 40-100kHz switching IXGA48N60C3 IXGH48N60C3 IXGP48N60C3 VCES = IC110 = VCE(sat) ≤ tfi(typ) = 600V 48A 2.5V 38ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 IC110 TC = 25°C ( Limited by Leads) TC = 110°C 75 48 A A ICM TC = 25°C, 1ms 250 A IA TC = 25°C 30 A EAS TC = 25°C 300 mJ SSOA VGE = 15V, TVJ = 125°C, RG = 3Ω ICM = 100 A (RBSOA) Clamped Inductive Load @ ≤ 600V PC TC = 25°C 300 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ TL 1.6mm (0.062 in.) from Case for 10s 300 °C TSOLD Plastic Body for 10 Seconds 260 °C Md Mounting Torque (TO-247&TO-220) 1.13/10 Nm/lb.in. Weight TO-247 TO-220 TO-263 E 6.0 3.0 2.5 g g g Characteristic Values (TJ = 25°C Unless Otherwise Specified) Min. BVCES IC = 250μA, VGE = 0V 600 VGE(th) IC = 250μA, VCE = VGE 3.0 Typ. 5.5 VCE = VCES VGE = 0V TJ = 125°C IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = 30A, VGE = 15V, Note 1 TJ = 125°C Max. G 2.3 1.8 G (TAB) C E z z z z Optimized for Low Switching Losses Square RBSOA Avalanche Rated Fast Switching International Standard Packages Advantages High Power Density Low Gate Drive Requirement V z V Applications 25 μA z z V V C = Collector TAB = Collector Features z z z z z z © 2009 IXYS CORPORATION, All rights reserved (TAB) E G = Gate E = Emitter 250 μA 2.5 C TO-220 (IXGP) z ±100 nA (TAB) TO-247 (IXGH) z Symbol Test Conditions ICES G High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS99953A(01/09) IXGA48N60C3 IXGH48N60C3 IXGP48N60C3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. IC = 30A, VCE = 10V, Note 1 20 TO-247 (IXGH) Outline 30 S 1960 pF 207 pF Cres 66 pF Qg 77 nC Cies Coes Qge VCE = 25V, VGE = 0V, f = 1MHz 16 nC Qgc 32 nC td(on) 19 ns tri Eon td(off) tfi IC = 30A, VGE = 15V, VCE = 0.5 • VCES Inductive Load, TJ = 25°C IC = 30A, VGE = 15V 26 ns 0.41 mJ 60 VCE = 400V, RG = 3Ω Eoff 0.23 td(on) 19 tri Inductive Load, TJ = 125°C Eon IC = 30A, VGE = 15V td(off) VCE = 400V, RG = 3Ω tfi Eoff ns ns 0.42 mJ ns 26 ns 0.65 mJ 92 ns 95 ns 0.57 mJ RthJC RthCS 100 38 ∅P e Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 0.42 °C/W (TO-247) (TO-220) 0.21 0.50 °C/W °C/W TO-220 (IXGP) Outline Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%. TO-263 (IXGA) Outline Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain IXYS reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGA48N60C3 IXGH48N60C3 IXGP48N60C3 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 60 300 VGE = 15V 13V 11V 55 50 270 45 13V 210 40 35 IC - Amperes IC - Amperes VGE = 15V 240 9V 30 25 20 180 150 11V 120 90 15 9V 60 10 7V 5 30 0 7V 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 0 2 4 6 60 16 18 20 VGE = 15V VCE(sat) - Normalized IC - Amperes 14 1.1 45 40 9V 35 30 25 20 15 I 1.0 C = 60A 0.9 I 0.8 C = 30A 0.7 7V 10 0.6 I 5 0 C = 15A 0.5 0 0.4 0.8 1.2 1.6 2 2.4 25 2.8 50 VCE - Volts 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 100 5.0 90 TJ = 25ºC 4.5 80 70 I 3.5 C IC - Amperes 4.0 VCE - Volts 12 1.2 VGE = 15V 13V 11V 50 10 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ 125ºC 55 8 VCE - Volts VCE - Volts = 60A 30A 15A 3.0 60 TJ = -125ºC 25ºC - 40ºC 50 40 30 20 2.5 10 2.0 0 7 8 9 10 11 12 13 VGE - Volts © 2009 IXYS CORPORATION, All rights reserved 14 15 5.0 5.5 6.0 6.5 7.0 7.5 VGE - Volts 8.0 8.5 9.0 9.5 10.0 IXGA48N60C3 IXGH48N60C3 IXGP48N60C3 Fig. 8. Gate Charge Fig. 7. Transconductance 50 16 TJ = - 40ºC 45 14 VCE = 300V 12 I G = 10 mA I C = 30A 40 25ºC 30 VGE - Volts g f s - Siemens 35 125ºC 25 20 10 8 6 15 4 10 2 5 0 0 0 10 20 30 40 50 60 70 80 90 100 110 0 120 10 20 30 Fig. 9. Capacitance 50 60 70 80 Fig. 10. Reverse-Bias Safe Operating Area 10,000 110 f = 1 MHz 100 Cies 90 80 1,000 IC - Amperes Capacitance - PicoFarads 40 QG - NanoCoulombs IC - Amperes Coes 100 Cres 70 60 50 40 30 TJ = 125ºC 20 RG = 3Ω dV / dt < 10V / ns 10 10 0 5 10 15 20 25 30 35 0 200 40 250 300 350 400 450 500 550 600 650 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions and dimensions. IXYS REF: G_48N60C3(5D)1-23-09-B IXGA48N60C3 IXGH48N60C3 IXGP48N60C3 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Swiching Energy Loss vs. Collector Current 2.4 2.0 2.6 Eon - Eoff --- TJ = 125ºC , VGE = 15V 2.0 2.2 0.8 I C = 30A 1.0 0.4 I C = 15A 0.6 0.0 Eoff - MilliJoules Eoff - MilliJoules 1.4 10 15 20 25 30 1.4 1.4 1.2 1.2 1.0 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0.0 15 35 20 25 30 RG - Ohms 1.8 I C = 60A 1.4 1.2 1.2 1.0 1.0 0.8 0.8 - MilliJoules 0.6 on I C = 30A 0.6 0.4 0.4 0.2 I C = 15A 0.0 35 45 55 65 75 tf 120 TJ = 125ºC, VGE = 15V 300 115 VCE = 400V 275 110 85 95 105 115 I 175 90 150 I = 15A 125 75 50 0 5 10 15 20 25 30 35 RG - Ohms Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 100 110 VCE = 400V 95 120 90 85 TJ = 125ºC 80 80 70 75 60 70 50 65 40 60 TJ = 25ºC t f - Nanoseconds 100 tf 140 td(off) - - - - 110 RG = 3Ω , VGE = 15V VCE = 400V 120 100 100 I C 90 = 60A 80 80 I C = 30A 60 I C = 15A 40 70 60 55 20 50 45 50 IC - Amperes © 2009 IXYS CORPORATION, All rights reserved 55 60 20 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 50 125 t d(off) - Nanoseconds RG = 3Ω , VGE = 15V 160 105 t d(off) - Nanoseconds t f - Nanoseconds C 70 120 40 200 = 30A 0.0 125 td(off) - - - - 35 C 95 100 110 30 225 100 75 tf 25 250 = 60A 0.2 130 20 C 325 80 140 15 td(off) - - - - I 105 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 30 60 125 TJ - Degrees Centigrade 90 55 350 85 25 50 t d(off) - Nanoseconds 1.4 t f - Nanoseconds 1.6 VCE = 400V E Eoff - MilliJoules ---- RG = 3Ω , VGE = 15V 1.6 45 130 2.0 Eon 40 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 2.0 Eoff 35 IC - Amperes Fig. 14. Inductive Swiching Energy Loss vs. Junction Temperature 1.8 1.0 TJ = 125ºC, 25ºC 0.8 0.0 0.2 5 1.6 VCE = 400V - MilliJoules - MilliJoules 1.2 1.8 on 1.8 = 60A on C ---- E I E 1.6 Eon RG = 3Ω , VGE = 15V 1.6 VCE = 400V 0 2.0 Eoff 1.8 IXGA48N60C3 IXGH48N60C3 IXGP48N60C3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 50 tr 120 = 60A 80 35 60 30 40 25 20 20 I 0 0 C = 15A, 30A 15 5 10 15 20 25 30 tr 25 td(on) - - - - RG = 3Ω , VGE = 15V 90 24 80 VCE = 400V 23 70 25ºC < TJ < 125ºC 22 60 21 50 20 40 19 30 18 20 17 10 16 0 15 15 35 t d(on) - Nanoseconds 40 C 26 100 t d(on) - Nanoseconds VCE = 400V I 110 45 TJ = 125ºC, VGE = 15V 100 t r - Nanoseconds td(on) - - - - t r - Nanoseconds 140 20 25 30 35 40 45 50 55 60 IC - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 80 25 70 24 I C = 60A t r - Nanoseconds tr 23 td(on) - - - - RG = 3Ω , VGE = 15V 50 22 VCE = 400V 40 21 I 30 C = 30A 20 20 19 10 I C 18 = 15A 0 25 35 45 55 65 75 85 95 105 t d(on) - Nanoseconds 60 115 17 125 TJ - Degrees Centigrade IXYS reserves the right to change limits, test conditions and dimensions. IXYS REF: G_48N60C3(5D)1-23-09-B