IXGH72N60B3 IXGT72N60B3 GenX3TM B3-Class IGBTs VCES IC110 VCE(sat) tfi(typ) Medium Speed low Vsat PT IGBTs 5-40 kHz Switching = = ≤£ = 600V 72A 1.80V 90ns TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (Limited by Leads) 75 A IC110 TC = 110°C 72 A ICM TC = 25°C, 1ms 400 A IA TC = 25°C 20 A EAS TC = 25°C 200 mJ SSOA VGE = 15V, TVJ = 125°C, RG = 3Ω ICM = 240 A (RBSOA) Clamped Inductive Load @ VCE ≤ 600 V PC TC = 25°C 540 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 1.13 / 10 Nm/lb.in. TJ Md Mounting Torque (TO-247) TL 1.6mm (0.062 in.) from Case for 10s 300 °C TSOLD Plastic Body for 10 seconds 260 °C Weight TO-247 TO-268 6 5 g g G C (TAB) E TO-268 (IXGT) G E (TAB) G = Gate E = Emitter C = Collector TAB = Collector Features z z z z Optimized for Low Conduction and Switching Losses Square RBSOA Avalanche Rated International Standard Packages Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 600 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 60A, VGE = 15V, Note 1 z V TJ = 125°C TJ = 125°C z 1.51 1.48 Applications 5.0 V 75 750 μA μA ±100 nA z 1.80 V V z z z z z z z © 2009 IXYS CORPORATION, All Rights Reserved High Power Density Low Gate Drive Requirement Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS99847A(02/09) IXGH72N60B3 IXGT72N60B3 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 50 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz 83 S 6800 575 80 pF pF pF 230 40 82 nC nC nC 31 ns 33 1.38 ns mJ Qg Qge Qgc IC = 60A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) TO-247 AD Outline Inductive load, TJ = 25°°C IC = 50A, VGE = 15V 150 330 ns 90 160 ns Eoff 1.05 2.0 mJ td(on) tri Eon td(off) tfi Eoff 29 34 2.70 228 142 2.20 ns ns mJ ns ns mJ 0.25 0.23 °C/W °C/W tfi RthJC RthCS VCE = 480V, RG = 3Ω Inductive load, TJ = 125°°C IC = 50A,VGE = 15V VCE = 480V,RG = 3Ω (TO-247) ∅P e Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline Note 1: Pulse Test, t ≤ 300μs, Duty Cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH72N60B3 IXGT72N60B3 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 120 330 VGE = 15V 13V 11V 100 270 9V 240 80 60 IC - Amperes IC - Amperes VGE = 15V 13V 11V 300 7V 40 210 9V 180 150 120 90 7V 60 20 30 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 1 2 VCE(sat) - Normalized IC - Amperes 6 7 8 125 150 7.5 8.0 VGE = 15V 1.2 80 60 7V 40 20 I C = 120A I C = 60A I C = 30A 1.1 1.0 0.9 0.8 5V 0.7 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 2.4 -25 0 VCE - Volts 25 50 75 100 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 180 4.5 TJ = 25ºC 4.0 C 160 = 120A 60A 30A 140 IC - Amperes I 3.5 VCE - Volts 5 1.3 VGE = 15V 13V 11V 9V 100 4 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ 125ºC 120 3 VCE - Volts VCE - Volts 3.0 2.5 120 100 80 TJ = 125ºC 25ºC - 40ºC 60 2.0 40 1.5 20 1.0 0 5 6 7 8 9 10 11 VGE - Volts © 2009 IXYS CORPORATION, All Rights Reserved 12 13 14 15 4.0 4.5 5.0 5.5 6.0 VGE - Volts 6.5 7.0 IXGH72N60B3 IXGT72N60B3 Fig. 7. Transconductance Fig. 8. Gate Charge 130 16 120 TJ = - 40ºC 25ºC 125ºC 100 90 g f s - Siemens VCE = 300V 14 110 I C = 60A I G = 10mA 12 VGE - Volts 80 70 60 50 10 8 6 40 4 30 20 2 10 0 0 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 IC - Amperes Fig. 9. Capacitance 140 160 180 200 220 240 Fig. 10. Reverse-Bias Safe Operating Area 280 10,000 Cies 240 200 1,000 IC - Amperes Capacitance - PicoFarads 100 120 QG - NanoCoulombs Coes 160 120 100 80 Cres 40 f = 1 MHz 0 100 10 0 5 10 15 20 25 30 35 TJ = 125ºC RG = 3Ω dV / dt < 10V / ns 40 200 300 VCE - Volts 400 500 600 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_72N60B3(76)02-10-09-D IXGH72N60B3 IXGT72N60B3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 8 9 7 7 8 6 =100A 7 VCE = 480V TJ = 125ºC , VGE = 15V I C = 50A 2 4 1 5 10 15 20 25 30 35 40 45 50 TJ = 125ºC 4 4 3 3 TJ = 25ºC 20 55 30 40 50 7 ---I C = 50A VCE = 480V 2 3 - MilliJoules Eon t f - Nanoseconds on 4 2 1 0 25 35 45 55 65 75 85 95 105 115 C = 100A 180 850 160 I C 140 550 I 100 C 5 10 15 t f - Nanoseconds 50 55 200 245 220 180 130 175 110 160 TJ = 25ºC 70 70 45 235 205 60 100 40 260 190 50 35 220 150 40 30 250 VCE = 480V 30 25 80 IC - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 90 230 I C = 25A, 50A, 100A 160 215 140 200 120 185 100 145 80 130 100 60 tr td(off) - - - - RG = 3Ω , VGE = 15V 170 155 VCE = 480V 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 140 125 t d(off) - Nanoseconds RG = 3Ω , VGE = 15V 20 20 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature t d(off) - Nanoseconds td(off) - - - - 90 250 TJ = 125ºC, VGE = 15V VCE = 480V 0 t f - Nanoseconds TJ = 125ºC 170 400 td(off) - - - - RG - Ohms 230 tf tf = 25A 80 0 125 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 190 700 = 50A TJ - Degrees Centigrade 210 1150 1000 I 120 1 I C = 25A = 25A, 50A, 100A 200 5 4 C t d(off) - Nanoseconds = 100A RG = 3Ω , VGE = 15V 0 100 90 1300 I 220 6 Eoff 80 240 E Eoff - MilliJoules 6 3 70 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 7 C 60 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature I 2 1 RG - Ohms 5 5 0 1 0 VCE = 480V 5 1 2 0 6 2 3 I C = 25A ---- - MilliJoules 3 5 Eon RG = 3Ω , VGE = 15V on 4 --- Eoff E 6 Eon - Eoff - MilliJoules 5 on E Eoff - MilliJoules 6 C Eoff - MilliJoules I 7 IXGH72N60B3 IXGT72N60B3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 170 140 150 TJ = 125ºC, VGE = 15V VCE = 480V 70 95 90 80 70 65 I 50 C = 50A I C 0 5 10 15 20 25 30 35 40 45 50 33 RG = 3Ω , VGE = 15V VCE = 480V 32 TJ = 25ºC, 125ºC 60 31 50 25ºC < TJ < 125ºC 30 29 30 28 35 20 27 20 10 = 25A 10 td(on) - - - - 40 50 30 - Nanoseconds t r - Nanoseconds = 100A 110 34 tr t d(on) - Nanoseconds 110 C 80 d(on) I 125 t 130 90 td(on) - - - - t r - Nanoseconds tr 55 20 RG - Ohms 30 40 50 60 70 80 90 26 100 IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 100 35 90 34 33 I C = 100A tr 70 td(on) - - - - RG = 3Ω , VGE = 15V 60 VCE = 480V 50 32 31 30 I C = 50A 40 29 30 28 20 t d(on) - Nanoseconds t r - Nanoseconds 80 27 I 10 C = 25A 26 0 25 35 45 55 65 75 85 95 105 115 25 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_72N60B3(76)02-10-09-D