Advance Technical Information IXXH75N60B3 XPTTM 600V IGBT GenX3TM VCES IC110 VCE(sat) tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 160 75 300 A A A IA EAS TC = 25°C TC = 25°C 30 500 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 5Ω Clamped Inductive Load ICM = 150 @VCE ≤ VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 22Ω, Non Repetitive 10 μs PC TC = 25°C 750 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C z 1.13/10 Nm/lb.in. z 6 g Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight C Tab E G = Gate E = Emitter C = Collector Tab = Collector Features z z z TJ TJM Tstg TL TSOLD G z z Optimized for 5-30kHz Switching Square RBSOA Avalanche Capability Short Circuit Capability International Standard Package Advantages z z High Power Density 175°C Rated Extremely Rugged Low Gate Drive Requirement Applications Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 600 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = ±20V VCE(sat) IC = 60A, VGE = 15V, Note 1 TJ = 150°C © 2011 IXYS CORPORATION, All Rights Reserved z z V 5.5 V 25 μA 2 mA TJ = 150°C IGES z 1.60 2.00 ±100 nA 1.85 V V z z z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100327(05/11) IXXH75N60B3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 20 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 75A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Notes: 32 S 3290 195 63 pF pF pF 107 30 48 nC nC nC 35 75 1.7 118 125 1.5 ns ns mJ ns ns mJ Inductive load, TJ = 25°C IC = 60A, VGE = 15V VCE = 400V, RG = 5Ω Note 2 160 2.1 36 72 2.6 145 170 2.2 ns ns mJ ns ns mJ 0.21 0.20 °C/W °C/W Inductive load, TJ = 150°C IC = 60A, VGE = 15V VCE = 400V, RG = 5Ω Note 2 RthJC RthCS TO-247 (IXXH) Outline 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Emitter Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXXH75N60B3 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 300 VGE = 15V VGE = 15V 14V 140 13V 250 12V 100 80 11V 60 14V 200 IC - Amperes IC - Amperes 120 10V 13V 150 12V 100 11V 40 9V 9V 8V 7V 0 0 0.5 1 1.5 2 2.5 3 10V 50 20 7V 0 3.5 0 5 10 15 20 25 30 VCE - Volts VCE - Volts Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 150ºC 2.2 VGE = 15V 14V 13V 140 100 11V 80 60 10V 40 0.5 1 1.5 2 2.5 3 3.5 4 1.6 1.4 I 1.2 C = 75A 1.0 I 6V 0 = 150A 0.6 8V 0 C 0.8 9V 20 I 1.8 12V VCE(sat) - Normalized IC - Amperes 120 VGE = 15V 2.0 C = 37.5A 0.4 -50 4.5 -25 0 25 VCE - Volts 50 75 100 125 150 175 11 12 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 120 8 TJ = 25ºC 7 100 80 IC - Amperes VCE - Volts 6 5 4 I C = 150A 60 TJ = 150ºC 25ºC 40 3 - 40ºC 75A 37.5A 2 20 0 1 9 10 11 12 13 VGE - Volts © 2011 IXYS CORPORATION, All Rights Reserved 14 15 4 5 6 7 8 VGE - Volts 9 10 IXXH75N60B3 Fig. 8. Gate Charge Fig. 7. Transconductance 60 16 TJ = - 40ºC, 25ºC, 150ºC 50 VCE = 300V 14 I C = 75A I G = 10mA VGE - Volts g f s - Siemens 12 40 30 20 10 8 6 4 10 2 0 0 0 25 50 75 100 125 150 0 10 20 30 IC - Amperes 40 50 60 70 80 90 100 110 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 10,000 160 Cies 120 1,000 IC - Amperes Capacitance - PicoFarads 140 Coes 100 100 80 60 40 Cres 20 f = 1 MHz 0 100 10 0 5 10 15 20 VCE - Volts 25 30 35 40 TJ = 150ºC RG = 5Ω dv / dt < 10V / ns 200 Fig. 11. Maximum Transient Thermal Impedance 300 400 500 600 VCE - Volts 1 Fig. 11. Maximum Transient Thermal Impedance aasss 0.4 Z(th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXXH75N60B3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 5 Eon - --- VCE = 400V 4 5 2.5 4 2 I 1.5 C = 40A 1 5 10 15 20 25 30 35 40 45 50 ---- 3.5 VCE = 400V TJ = 150ºC 2.4 2.5 1.6 2 TJ = 25ºC 1.2 1.5 3 0.8 1 2 0.4 0.5 1 0 0 20 55 25 30 35 40 Eoff Eon ---- tfi 280 RG = 5Ω , VGE = 15V 55 60 65 70 75 80 260 3 1.5 2 I C = 40A t f i - Nanoseconds 2.0 td(off) - - - - 450 400 VCE = 400V 240 350 I 220 C = 40A 300 200 250 180 200 I C = 80A 160 150 140 100 t d(off) - Nanoseconds 4 Eon - MilliJoules I C = 80A 2.5 500 TJ = 150ºC, VGE = 15V 5 1.0 1 0.5 25 50 75 100 120 0 150 125 50 5 10 15 20 25 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current td(off) - - - - 260 50 55 220 TJ = 150ºC 200 200 180 180 160 160 140 TJ = 25ºC 120 120 200 RG = 5Ω , VGE = 15V VCE = 400V t d(off) - Nanoseconds 220 td(on) - - - - 200 180 I C = 40A 180 160 160 140 140 120 I C = 80A 120 100 100 100 80 20 25 30 35 40 45 50 55 60 65 IC - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 70 75 80 100 25 50 75 100 TJ - Degrees Centigrade 125 80 150 t d(off) - Nanoseconds VCE = 400V 240 140 45 220 tfi 240 t f i - Nanoseconds tfi RG = 5Ω , VGE = 15V 220 40 240 280 260 35 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 300 280 30 RG - Ohms TJ - Degrees Centigrade t f i - Nanoseconds 50 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 300 6 VCE = 400V Eoff - MilliJoules 45 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 3.0 3 2 RG - Ohms 3.5 4 Eon - MilliJoules I C = 80A 3 2.8 Eon - MilliJoules 6 Eon RG = 5Ω , VGE = 15V 7 3.5 4.5 Eoff 3.2 8 TJ = 150ºC , VGE = 15V Eoff - MilliJoules Eoff 4.5 Eoff - MilliJoules 3.6 9 IXXH75N60B3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 240 120 120 100 I C tri = 40A t r i - Nanoseconds 100 120 I C 80 = 80A 20 25 30 35 40 45 80 38 TJ = 150ºC, 25ºC 60 34 40 20 26 20 0 40 15 42 VCE = 400V 30 60 10 TJ = 25ºC 150ºC 40 80 0 td(on) - - - - RG = 5Ω , VGE = 15V 22 20 50 t d(on) - Nanoseconds 160 t d(on) - Nanoseconds VCE = 400V 5 46 td(on) - - - - t r i - Nanoseconds tri TJ = 150ºC, VGE = 15V 200 140 25 30 35 40 45 50 55 60 65 70 75 80 IC - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 180 46 tri 160 td(on) - - - - 44 RG = 5Ω , VGE = 15V 42 VCE = 400V I 120 C = 80A 40 100 38 80 36 60 34 40 t d(on) - Nanoseconds t r i - Nanoseconds 140 32 I C = 40A 20 30 0 25 50 75 100 125 28 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXX_75N60B3D1(71)05-03-11