IXXH75N60B3 - IXYS Corporation

Advance Technical Information
IXXH75N60B3
XPTTM 600V IGBT
GenX3TM
VCES
IC110
VCE(sat)
tfi(typ)
Extreme Light Punch Through
IGBT for 5-30 kHz Switching
=
=
≤
=
600V
75A
1.85V
125ns
TO-247 AD
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1MΩ
600
600
V
V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
IC25
IC110
ICM
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
160
75
300
A
A
A
IA
EAS
TC = 25°C
TC = 25°C
30
500
A
mJ
SSOA
(RBSOA)
VGE = 15V, TVJ = 150°C, RG = 5Ω
Clamped Inductive Load
ICM = 150
@VCE ≤ VCES
A
tsc
(SCSOA)
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 22Ω, Non Repetitive
10
μs
PC
TC = 25°C
750
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300
260
°C
°C
z
1.13/10
Nm/lb.in.
z
6
g
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Md
Mounting Torque
Weight
C
Tab
E
G = Gate
E = Emitter
C
= Collector
Tab = Collector
Features
z
z
z
TJ
TJM
Tstg
TL
TSOLD
G
z
z
Optimized for 5-30kHz Switching
Square RBSOA
Avalanche Capability
Short Circuit Capability
International Standard Package
Advantages
z
z
High Power Density
175°C Rated
Extremely Rugged
Low Gate Drive Requirement
Applications
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVCES
IC
= 250μA, VGE = 0V
600
VGE(th)
IC
= 250μA, VCE = VGE
3.0
ICES
VCE = VCES, VGE = 0V
VCE = 0V, VGE = ±20V
VCE(sat)
IC
= 60A, VGE = 15V, Note 1
TJ = 150°C
© 2011 IXYS CORPORATION, All Rights Reserved
z
z
V
5.5
V
25 μA
2 mA
TJ = 150°C
IGES
z
1.60
2.00
±100
nA
1.85
V
V
z
z
z
z
z
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
DS100327(05/11)
IXXH75N60B3
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
20
IC = 60A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 75A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
Notes:
32
S
3290
195
63
pF
pF
pF
107
30
48
nC
nC
nC
35
75
1.7
118
125
1.5
ns
ns
mJ
ns
ns
mJ
Inductive load, TJ = 25°C
IC = 60A, VGE = 15V
VCE = 400V, RG = 5Ω
Note 2
160
2.1
36
72
2.6
145
170
2.2
ns
ns
mJ
ns
ns
mJ
0.21
0.20 °C/W
°C/W
Inductive load, TJ = 150°C
IC = 60A, VGE = 15V
VCE = 400V, RG = 5Ω
Note 2
RthJC
RthCS
TO-247 (IXXH) Outline
1
2
∅P
3
e
Terminals: 1 - Gate
3 - Emitter
Dim.
Millimeter
Min. Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
2 - Collector
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXXH75N60B3
Fig. 2. Extended Output Characteristics @ T J = 25ºC
Fig. 1. Output Characteristics @ T J = 25ºC
300
VGE = 15V
VGE = 15V
14V
140
13V
250
12V
100
80
11V
60
14V
200
IC - Amperes
IC - Amperes
120
10V
13V
150
12V
100
11V
40
9V
9V
8V
7V
0
0
0.5
1
1.5
2
2.5
3
10V
50
20
7V
0
3.5
0
5
10
15
20
25
30
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ T J = 150ºC
2.2
VGE = 15V
14V
13V
140
100
11V
80
60
10V
40
0.5
1
1.5
2
2.5
3
3.5
4
1.6
1.4
I
1.2
C
= 75A
1.0
I
6V
0
= 150A
0.6
8V
0
C
0.8
9V
20
I
1.8
12V
VCE(sat) - Normalized
IC - Amperes
120
VGE = 15V
2.0
C
= 37.5A
0.4
-50
4.5
-25
0
25
VCE - Volts
50
75
100
125
150
175
11
12
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
Fig. 6. Input Admittance
120
8
TJ = 25ºC
7
100
80
IC - Amperes
VCE - Volts
6
5
4
I
C
= 150A
60
TJ = 150ºC
25ºC
40
3
- 40ºC
75A
37.5A
2
20
0
1
9
10
11
12
13
VGE - Volts
© 2011 IXYS CORPORATION, All Rights Reserved
14
15
4
5
6
7
8
VGE - Volts
9
10
IXXH75N60B3
Fig. 8. Gate Charge
Fig. 7. Transconductance
60
16
TJ = - 40ºC, 25ºC, 150ºC
50
VCE = 300V
14
I C = 75A
I G = 10mA
VGE - Volts
g f s - Siemens
12
40
30
20
10
8
6
4
10
2
0
0
0
25
50
75
100
125
150
0
10
20
30
IC - Amperes
40
50
60
70
80
90
100
110
QG - NanoCoulombs
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
10,000
160
Cies
120
1,000
IC - Amperes
Capacitance - PicoFarads
140
Coes
100
100
80
60
40
Cres
20
f = 1 MHz
0
100
10
0
5
10
15
20
VCE - Volts
25
30
35
40
TJ = 150ºC
RG = 5Ω
dv / dt < 10V / ns
200
Fig. 11. Maximum Transient Thermal Impedance
300
400
500
600
VCE - Volts
1
Fig. 11. Maximum Transient Thermal Impedance
aasss
0.4
Z(th)JC - ºC / W
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.1
1
10
IXXH75N60B3
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
5
Eon -
---
VCE = 400V
4
5
2.5
4
2
I
1.5
C
= 40A
1
5
10
15
20
25
30
35
40
45
50
----
3.5
VCE = 400V
TJ = 150ºC
2.4
2.5
1.6
2
TJ = 25ºC
1.2
1.5
3
0.8
1
2
0.4
0.5
1
0
0
20
55
25
30
35
40
Eoff
Eon
----
tfi
280
RG = 5Ω , VGE = 15V
55
60
65
70
75
80
260
3
1.5
2
I C = 40A
t f i - Nanoseconds
2.0
td(off) - - - -
450
400
VCE = 400V
240
350
I
220
C
= 40A
300
200
250
180
200
I
C
= 80A
160
150
140
100
t d(off) - Nanoseconds
4
Eon - MilliJoules
I C = 80A
2.5
500
TJ = 150ºC, VGE = 15V
5
1.0
1
0.5
25
50
75
100
120
0
150
125
50
5
10
15
20
25
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
td(off) - - - -
260
50
55
220
TJ = 150ºC
200
200
180
180
160
160
140
TJ = 25ºC
120
120
200
RG = 5Ω , VGE = 15V
VCE = 400V
t d(off) - Nanoseconds
220
td(on) - - - -
200
180
I C = 40A
180
160
160
140
140
120
I
C
= 80A
120
100
100
100
80
20
25
30
35
40
45
50
55
60
65
IC - Amperes
© 2011 IXYS CORPORATION, All Rights Reserved
70
75
80
100
25
50
75
100
TJ - Degrees Centigrade
125
80
150
t d(off) - Nanoseconds
VCE = 400V
240
140
45
220
tfi
240
t f i - Nanoseconds
tfi
RG = 5Ω , VGE = 15V
220
40
240
280
260
35
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
300
280
30
RG - Ohms
TJ - Degrees Centigrade
t f i - Nanoseconds
50
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
300
6
VCE = 400V
Eoff - MilliJoules
45
IC - Amperes
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
3.0
3
2
RG - Ohms
3.5
4
Eon - MilliJoules
I C = 80A
3
2.8
Eon - MilliJoules
6
Eon
RG = 5Ω , VGE = 15V
7
3.5
4.5
Eoff
3.2
8
TJ = 150ºC , VGE = 15V
Eoff - MilliJoules
Eoff
4.5
Eoff - MilliJoules
3.6
9
IXXH75N60B3
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
240
120
120
100
I
C
tri
= 40A
t r i - Nanoseconds
100
120
I
C
80
= 80A
20
25
30
35
40
45
80
38
TJ = 150ºC, 25ºC
60
34
40
20
26
20
0
40
15
42
VCE = 400V
30
60
10
TJ = 25ºC
150ºC
40
80
0
td(on) - - - -
RG = 5Ω , VGE = 15V
22
20
50
t d(on) - Nanoseconds
160
t d(on) - Nanoseconds
VCE = 400V
5
46
td(on) - - - -
t r i - Nanoseconds
tri
TJ = 150ºC, VGE = 15V
200
140
25
30
35
40
45
50
55
60
65
70
75
80
IC - Amperes
RG - Ohms
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
180
46
tri
160
td(on) - - - -
44
RG = 5Ω , VGE = 15V
42
VCE = 400V
I
120
C
= 80A
40
100
38
80
36
60
34
40
t d(on) - Nanoseconds
t r i - Nanoseconds
140
32
I C = 40A
20
30
0
25
50
75
100
125
28
150
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: IXX_75N60B3D1(71)05-03-11