IGBT IXGA 15N100C IXGP 15N100C Lightspeed Series VCES IC25 VCE(sat) tfi(typ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 30 A IC90 TC = 90°C 15 A ICM TC = 25°C, 1 ms 60 A ICM = 40 A =1000 V = 30 A = 3.5 V = 115 ns Maximum Ratings SSOA VGE = 15 V, TVJ = 125°C, RG = 10 Ω (RBSOA) Clamped inductive load PC TC = 25°C TO-220AB (IXGP) G TO-263 AA (IXGA) @ 0.8 VCES TJ G 150 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque with screw M3 Mounting torque with screw M3.5 Weight TO-220 TO-263 CE 0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. 4 2 g g E C (TAB) Features • International standard packages JEDEC TO-220AB and TO-263AA • Low switching losses • MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Min. Characteristic Values Typ. Max. BVCES IC = 250 µA, VGE = 0 V 1000 VGE(th) IC = 250 µA, VCE = VGE 2.5 ICES VCE = VCES TJ = 25°C 100 µA VGE = 0 V TJ = 125°C 3.0 mA ±100 nA 3.5 V V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = ICE90, VGE = 15 TJ = 125°C © 2003 IXYS All rights reserved V 5.0 2.6 V • AC motor speed control • DC servo and robot drives • DC choppers • Uninterruptible power supplies (UPS) • Switch-mode and resonant-mode power supplies Advantages • Easy to mount with one screw • Reduces assembly time and cost • High power density DS98647B(01/03) IXGA 15N100C IXGP 15N100C Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs TO-220 AB Dimensions Characteristic Values Min. Typ. Max. IC = IC90; VCE = 10 V, 12 16 S Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 1720 pF 95 pF Cres 35 pF Qg 73 nC 13 nC 26 nC 25 ns 15 ns Cies Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°°C IC = IC90, VGE = 15 V VCE = 960 V, RG = Roff = 10 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG 150 101 160 ns 1.40 mJ 25 = IC90, VGE = 15 V VCE = 960 V, RG = Roff = 10 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG ns 0.60 mJ 220 ns 210 ns 1.85 mJ 0.83 TO-220 2 - Collector 4 - Collector Bottom Side ns 18 RthJC RthCK ns 0.85 Inductive load, TJ = 125°°C IC 200 Pins: 1 - Gate 3 - Emitter 0.5 K/W K/W TO-263 AA Outline 1. 2. 3. 4. Min. Recommended Footprint (Dimensions in inches and mm) Gate Collector Emitter Collector Bottom Side Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1