MCC 310 MCD 310 ITRMS = 2x 500 A ITAVM = 2x 320 A VRRM = 800-2200 V Thyristor Modules Thyristor/Diode Modules 3 VRSM VDSM VRRM VDRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 1 Version 1 Version 1 MCC 310-08io1 MCC 310-12io1 MCC 310-14io1 MCC 310-16io1 MCC 310-18io1 MCD 310-08io1 MCD 310-12io1 MCD 310-14io1 MCD 310-16io1 MCD 310-18io1 Symbol Test Conditions ITRMS, IFRMS ITAVM, IFAVM TVJ = TVJM TC = 85°C; 180° sine ITSM, IFSM TVJ = 45°C; VR = 0 òi2dt (di/dt)cr 76 2 Type Maximum Ratings 500 320 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 9200 9800 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 8000 8600 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 420 000 400 000 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 320 000 306 000 A2s A2s 100 A/ms TVJ = TVJM repetitive, IT = 960 A f =50 Hz, tP =200 ms VD = 2/3 VDRM IG = 1 A non repetitive, IT = 320 A diG/dt = 1 A/ms 5 4 3 6 7 1 5 4 2 3 1 5 4 2 MCC MCD Features International standard package Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 72873 Keyed gate/cathode twin pins ● ● 500 A/ms ● ● ● (dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM RGK = ¥; method 1 (linear voltage rise) 1000 V/ms PGM TVJ = TVJM IT = ITAVM PGAV 120 60 20 W W W VRGM 10 V TVJ TVJM Tstg -40...+140 140 -40...+125 °C °C °C 3000 3600 V~ V~ VISOL 50/60 Hz, RMS IISOL £ 1 mA tP = 30 ms tP = 500 ms t = 1 min t=1s ● Applications Motor control Power converter Heat and temperature control for industrial furnaces and chemical processes Lighting control Contactless switches ● ● ● ● ● Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits ● ● Mounting torque (M5) Terminal connection torque (M8) Weight Typical including screws 2.5-5/22-44 Nm/lb.in. 12-15/106-132 Nm/lb.in. Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved 320 g ● ● 030 Md 1-4 MCC 310 MCD 310 Symbol Test Conditions IRRM IDRM TVJ = TVJM; VR = VRRM; VD = VDRM VT, VF IT, IF = 600 A; TVJ = 25°C 1.32 V VT0 rT For power-loss calculations only (TVJ = 140°C) 0.8 0.82 V mW VGT VD = 6 V; IGT VD = 6 V; TVJ = 25°C TVJ = -40°C TVJ = 25°C TVJ = -40°C 2 3 150 200 V V mA mA VGD IGD TVJ = TVJM; VD = 2/3 VDRM 0.25 10 V mA IL TVJ = 25°C; tP = 30 ms; VD = 6 V IG = 0.45 A; diG/dt = 0.45 A/ms 200 mA IH TVJ = 25°C; VD = 6 V; RGK = ¥ 150 mA tgd TVJ = 25°C; VD = 1/2 VDRM IG = 1 A; diG/dt = 1 A/ms 2 ms tq TVJ = TVJM; IT = 300 A, tP = 200 ms; -di/dt = 10 A/ms VR = 100 V; dv/dt = 50 V/ms; VD = 2/3 VDRM QS IRM TVJ = 125°C; IT, IF = 400 A, -di/dt = 50 A/ms RthJC per per per per RthJK dS dA a Characteristic Values thyristor/diode; DC current module thyristor/diode; DC current module Creepage distance on surface Strike distance through air Maximum allowable acceleration 70 40 other values see Fig. 8/9 mA mA typ. 200 ms 760 275 mC A 0.112 0.056 0.152 0.076 K/W K/W K/W K/W 12.7 9.6 50 mm mm m/s2 Fig. 1 Gate trigger characteristics Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1 Fig. 2 Gate trigger delay time Dimensions in mm (1 mm = 0.0394") MCC MCD Threaded spacer for higher Anode/ Cathode construction: Type ZY 250, material brass 20 12 14 © 2000 IXYS All rights reserved 2-4 MCC 310 MCD 310 Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 4 òi2dt versus time (1-10 ms) Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode) Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature © 2000 IXYS All rights reserved 3-4 MCC 310 MCD 310 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature 0.15 Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) K/W ZthJC 30° DC RthJC for various conduction angles d: 0.10 0.05 d RthJC (K/W) DC 180°C 120°C 60°C 30°C 0.112 0.113 0.114 0.115 0.115 Constants for ZthJC calculation: i 0.000 10-3 10-2 10-1 100 101 102 s t 0.20 1 2 3 Rthi (K/W) ti (s) 0.003 0.0143 0.0947 0.099 0.168 0.456 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) K/W ZthJK 30° DC 0.15 RthJK for various conduction angles d: 0.10 d RthJK (K/W) DC 180°C 120°C 60°C 30°C 0.152 0.154 0.154 0.155 0.155 0.05 Constants for ZthJK calculation: i 0 0.00 10-3 10-2 10-1 100 101 s t 102 1 2 3 4 Rthi (K/W) ti (s) 0.003 0.0143 0.0947 0.04 0.099 0.168 0.456 1.36 835 © 2000 IXYS All rights reserved 4-4