JMnic Product Specification 2SA1355 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage. ・Short switching time. APPLICATIONS ・Various inductance lamp drivers for electrical equipment. ・Inverters, converters ・Power amplifier ・High-speed switching PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -70 V VCEO Collector-emitter voltage Open base -70 V VEBO Emitter-base voltage Open collector -5 V -4 A 30 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SA1355 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=-1mA ,IE=0 -70 V V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,IB=0 -70 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ,IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A -0.5 V VBEsat Base-emitter saturation voltage IC=-2A; IB=-0.2A -1.2 V ICBO Collector cut-off current VCB=-40V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -100 μA hFE DC current gain IC=-1A ; VCE=-2V Transition frequency IC=-1A ; VCE=-5V fT 2 70 280 40 MHz JMnic Product Specification 2SA1355 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3