JMNIC 2SA1355

JMnic
Product Specification
2SA1355
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220 package
・Low collector saturation voltage.
・Short switching time.
APPLICATIONS
・Various inductance lamp drivers for
electrical equipment.
・Inverters, converters
・Power amplifier
・High-speed switching
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-70
V
VCEO
Collector-emitter voltage
Open base
-70
V
VEBO
Emitter-base voltage
Open collector
-5
V
-4
A
30
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SA1355
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA ,IE=0
-70
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=-1mA ,IB=0
-70
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ,IC=0
-5
V
VCEsat
Collector-emitter saturation voltage
IC=-2A; IB=-0.2A
-0.5
V
VBEsat
Base-emitter saturation voltage
IC=-2A; IB=-0.2A
-1.2
V
ICBO
Collector cut-off current
VCB=-40V; IE=0
-100
μA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-100
μA
hFE
DC current gain
IC=-1A ; VCE=-2V
Transition frequency
IC=-1A ; VCE=-5V
fT
2
70
280
40
MHz
JMnic
Product Specification
2SA1355
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3