JMnic Product Specification 2SC2810 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage,High speed APPLICATIONS ・For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7 A ICM Collector current-peak 14 A PC Collector dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SC2810 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 500 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A 0.5 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.6A 1.3 V ICBO Collector cut-off current VCB=500V ;IE=0 10 μA IEBO Emitter cut-off current VEB=7V; IC=0 10 μA hFE DC current gain IC=3A ; VCE=4V Transition frequency IC=0.5A ; VCE=12V fT CONDITIONS 2 MIN TYP. MAX UNIT 10 18 MHz JMnic Product Specification 2SC2810 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3