JMNIC 2SB1069A

JMnic
Product Specification
2SB1069 2SB1069A
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220 package
・High speed switching
・Low collector saturation voltage
APPLICATIONS
・For low-voltage switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
2SB1069
VCBO
Collector-base voltage
-20
Open base
2SB1069A
VEBO
Emitter-base voltage
V
-50
2SB1069
Collector-emitter voltage
UNIT
-40
Open emitter
2SB1069A
VCEO
VALUE
V
-40
Open collector
-5
V
IC
Collector current
-4
A
ICM
Collector current-peak
-8
A
PC
Collector power dissipation
Ta=25℃
1.4
TC=25℃
25
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
2SB1069 2SB1069A
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SB1069
V(BR)CEO
Collector-emitter
breakdown voltage
MIN
TYP.
MAX
UNIT
-20
IC=-10mA ,IB=0
V
-40
2SB1069A
VCEsat
Collector-emitter saturation voltage
IC=-2A; IB=-0.1A
-0.5
V
VBEsat
Base-emitter saturation voltage
IC=-2A; IB=-0.1A
-1.5
V
ICBO
Collector cut-off current
VCB=-40V; IE=0
-50
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-50
μA
hFE-1
DC current gain
IC=-0.1A ; VCE=-2V
45
hFE-2
DC current gain
IC=-1A ; VCE=-2V
60
Transition frequency
IC=-0.5A ; VCE=-5V
fT
260
150
MHz
0.3
μs
0.4
μs
0.1
μs
Switching times
ton
Turn-on time
tstg
Storage time
tf
‹
IC=-2A; IB1=-IB2=-0.2A
Fall time
hFE-2 classifications
R
Q
P
60-120
90-180
130-260
2
JMnic
Product Specification
2SB1069 2SB1069A
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3