JMnic Product Specification 2SB509 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・Complement to type 2SD315 APPLICATIONS ・For use in audio frequency power amplifier application PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -4 A ICM Collector current-peak -10 A PC Collector power dissipation 35 W Tj Junction temperature 150 ℃ Tstg Storage temperature -40~150 ℃ TC=25℃ JMnic Product Specification 2SB509 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A -1.0 V VBE Base-emitter on voltage IC=-1A ; VCE=-2V -1.5 V ICBO Collector cut-off current VCB=-20V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-4V; IC=0 -1.0 mA hFE-1 DC current gain IC=-1A ; VCE=-2V 40 hFE-2 DC current gain IC=-0.1A ; VCE=-2V 40 Transition frequency IC=-0.5A ; VCE=-5V fT CONDITIONS hFE-1 Classifications C D E F 40-80 60-120 100-200 160-320 2 MIN TYP. MAX -60 UNIT V 320 8 MHz JMnic Product Specification 2SB509 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3