JMNIC 2SA1837

JMnic
Product Specification
2SA1837
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220F package
・Complement to type 2SC4793
・High transition frequency
APPLICATIONS
・Power amplifier applications
・Driver stage amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-230
V
VCEO
Collector-emitter voltage
Open base
-230
V
VEBO
Emitter-base voltage
Open collector
-5
V
-1
A
-0.1
A
IC
Collector current
IB
Base current
PC
Collector dissipation
TC=25℃
20
Ta=25℃
2.0
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
2SA1837
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ; IB=0
VCEsat
Collector-emitter saturation voltage
IC=-0.5A ;IB=-50mA
-1.5
V
VBE
Base-emitter voltage
IC=-0.5A ; VCE=-5V
-1.0
V
ICBO
Collector cut-off current
VCB=-230V; IE=0
-1.0
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-1.0
μA
hFE
DC current gain
IC=-0.1A ; VCE=-5V
COB
Output capacitance
IE=0; VCB=-10V;f=1MHz
30
pF
fT
Transition frequency
IC=-0.1A ; VCE=-10V
70
MHz
2
MIN
TYP.
MAX
-230
UNIT
V
100
320
JMnic
Product Specification
2SA1837
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
JMnic
Product Specification
2SA1837
Silicon PNP Power Transistors
4