JMnic Product Specification 2SA1837 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SC4793 ・High transition frequency APPLICATIONS ・Power amplifier applications ・Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -230 V VCEO Collector-emitter voltage Open base -230 V VEBO Emitter-base voltage Open collector -5 V -1 A -0.1 A IC Collector current IB Base current PC Collector dissipation TC=25℃ 20 Ta=25℃ 2.0 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SA1837 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=-0.5A ;IB=-50mA -1.5 V VBE Base-emitter voltage IC=-0.5A ; VCE=-5V -1.0 V ICBO Collector cut-off current VCB=-230V; IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 μA hFE DC current gain IC=-0.1A ; VCE=-5V COB Output capacitance IE=0; VCB=-10V;f=1MHz 30 pF fT Transition frequency IC=-0.1A ; VCE=-10V 70 MHz 2 MIN TYP. MAX -230 UNIT V 100 320 JMnic Product Specification 2SA1837 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 JMnic Product Specification 2SA1837 Silicon PNP Power Transistors 4