JMNIC 2SC2580

JMnic
Product Specification
2SC2580
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PN package
・Complement to type 2SA1105
・High power dissipation
・High current capability
APPLICATIONS
・Audio power amplifier
・DC-DC converter
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
180
V
VCEO
Collector-emitter voltage
Open base
120
V
VEBO
Emitter-base voltage
Open collector
6
V
9
A
90
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SC2580
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=25mA ;IB=0
120
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
180
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
6
V
Collector-emitter saturation voltage
IC=5A; IB=0.5A
2.5
V
ICBO
Collector cut-off current
VCB=180V; IE=0
100
μA
IEBO
Emitter cut-off current
VEB=6V; IC=0
100
μA
hFE
DC current gain
IC=3A ; VCE=4V
Transition frequency
IC=0.5A ; VCE=10V
VCEsat
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
50
20
MHz
JMnic
Product Specification
2SC2580
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3