JMnic Product Specification 2SA740 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC1448 APPLICATIONS ・Power amplifier applications ・Vertical output applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -1.5 A IE Emitter current 1.5 A PC Collector power dissipation Ta=25℃ 1.5 W TC=25℃ 25 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SA740 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ,IB=0 VCEsat Collector-emitter saturation voltage IC=-500mA; IB=-50mA -1.5 V VBE Base-emitter on voltage IC=-500mA ; VCE=-10V -1.0 V ICBO Collector cut-off current VCB=-100V; IE=0 -20 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE DC current gain IC=-500mA ; VCE=-10V COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 90 pF fT Transition frequency IC=-500mA ; VCE=-10V 8 MHz 2 MIN TYP. MAX -150 UNIT V 40 140 JMnic Product Specification 2SA740 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3