Product Specification www.jmnic.com 2SC3297 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・High speed switching time APPLICATIONS ・High current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 30 V VCEO Collector-emitter voltage Open base 30 V VEBO Emitter-base voltage Open collector 5 V 3 A 15 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification www.jmnic.com 2SC3297 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO Collector-emitter breakdown voltage IC=10mA , IB=0 30 V VCBO Collector-base breakdown voltage IC=1mA , IE=0 30 V VEBO Emitter-base breakdown voltage IE=1mA , IC=0 5 V VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.2A 1.0 V VBE Base-emitter on voltage IC=0.5A ; VCE=5V 1.0 V ICBO Collector cut-off current VCB=30V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.5A ; VCE=2V 70 hFE-2 DC current gain IC=3A ; VCE=5V 20 Transition frequency IC=0.5A ; VCE=5V fT CONDITIONS JMnic MIN TYP. MAX UNIT 280 100 MHz Product Specification www.jmnic.com 2SC3297 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) JMnic