JMnic Product Specification 2SC3169 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・High breakdown voltge APPLICATIONS ・For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 2 A ICM Collector current-peak 4 A PC Collector power dissipation Ta=25℃ 2 W TC=25℃ 25 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SC3169 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A , L=25mH VCEsat Collector-emitter saturation voltage IC=1A ;IB=0.2A 1.0 V VBEsat Base-emitter saturation voltage IC=1A ;IB=0.2A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE-1 DC current gain IC=0.1A ; VCE=5V 15 hFE-2 DC current gain IC=1A ; VCE=5V 8 Transition frequency IC=0.2A ; VCE=10V fT 400 UNIT V 8 MHz Switching times ton Turn-on time tstg Storage time tf IC=1A ; IB1=-IB2=0.2A VCC=100V Fall time 2 1.0 μs 3.0 μs 1.0 μs JMnic Product Specification 2SC3169 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3