JMNIC 2SD1274B

Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD1274 2SD1274A 2SD1274B
・
DESCRIPTION
・With TO-220Fa package
・High VCBO
・High speed switching
APPLICATIONS
・Power amplifier applicaitons
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
ABSOLUTE MAXIMUM RATINGS AT Tc=25℃
SYMBOL
PARAMETER
CONDITIONS
2SD1274
VCBO
Collector-base voltage
2SD1274A
VALUE
UNIT
150
Open emitter
2SD1274B
200
V
250
VCEO
Collector-emitter voltage
Open base
80
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current (DC)
5
A
PC
Collector power dissipation
TC=25℃
40
Ta=25℃
2
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD1274 2SD1274A 2SD1274B
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
Collector-emitter sustaining voltage
IC=0.2A, L=25mH
80
V
VEBO
Emitter-base voltage
IE=1mA, IC=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=5A; IB=1A
1.6
V
Base-emitter voltage
IC=5A ; VCE=4V
1.5
V
1
mA
50
μA
VBE
ICBO
Collector cut-off current
2SD1274
VCB=150V; IE=0
2SD1274A
VCB=200V; IE=0
2SD1274B
VCB=250V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=5A ; VCE=4V
fT
Transition frequency
IC=0.5A ; VCE=10V
tf
Fall time
IC=5A ;IB1=0.8A VEB=-5V
JMnic
14
40
MHz
1.0
μs
Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2SD1274 2SD1274A 2SD1274B
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
JMnic