JMnic Product Specification 2SC3214 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS ・For switching regulator and DC/DC converter applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1200 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 5 A ICM Collector current-peak 8 A IB Base current 3 A PC Collector power dissipation 80 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.0 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base JMnic Product Specification 2SC3214 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 800 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 1200 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.5A 1.0 V VBEsat Base-emitter saturation voltage IC=2.5A; IB=0.5A 1.5 V ICBO Collector cut-off current VCB=960V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE DC current gain IC=1.5A ; VCE=5V 2 MIN 10 TYP. MAX UNIT JMnic Product Specification 2SC3214 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3