JMNIC 2SC4804

JMnic
Product Specification
2SC4804
Silicon NPN Power Transistors
DESCRIPTION
・With ITO-220 package
・High breakdown voltage
APPLICATIONS
・Switching regulator and high voltage
switching applications
・High speed DC-DC converter applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (ITO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
900
V
VCEO
Collector-emitter voltage
Open base
600
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
3
A
ICM
Collector current-Peak
5
A
IB
Base current
1
A
PT
Total power dissipation
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SC4804
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;IB=0
600
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
900
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=0.8A; IB=0.16A
0.6
V
VBEsat
Base-emitter saturation voltage
IC=0.8A; IB=0.16A
1.2
V
ICBO
Collector cut-off current
VCB=800V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
0.1
mA
hFE
DC current gain
IC=0.8A ; VCE=5V
2
MIN
10
TYP.
MAX
UNIT
JMnic
Product Specification
2SC4804
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3