JMnic Product Specification 2SC3159 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・High voltage ・High switching speed APPLICATIONS ・For switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A ICM Collector current-peak 20 A IB Base current 3.5 A PC Collector dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SC3159 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 500 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A 1.0 V VBEsat Base-emitter saturation voltage IC=6A; IB=1.2A 1.2 V ICBO Collector cut-off current VCB=400V ;IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=1A ; VCE=5V 15 hFE-2 DC current gain IC=6A ; VCE=5V 10 2 MIN TYP. MAX 80 UNIT JMnic Product Specification 2SC3159 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3