JMNIC 2SC3637

JMnic
Product Specification
2SC3637
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PN package
・High voltage ,high speed
・High reliability
APPLICATIONS
・Ultrahigh-definition CRT display horizontal
deflection output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
900
V
VCEO
Collector-emitter voltage
Open base
500
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
10
A
ICM
Collector current-peak
20
A
PC
Collector power dissipation
90
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SC3637
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ; IB=0
VCEsat
Collector-emitter saturation voltage
IC=5A ;IB=1A
2.0
V
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=1A
1.5
V
ICBO
Collector cut-off current
VCB=500V; IE=0
10
μA
ICES
Collector cut-off current
VCE=900V; RBE=0
0.5
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
mA
hFE
DC current gain
IC=1A ; VCE=5V
3.0
μs
0.2
μs
500
UNIT
V
8
Switching times
ts
Storage time
VCC=200V;IC=5A;
IB1=1A; IB2=-2A
tf
Fall time
0.1
2
JMnic
Product Specification
2SC3637
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
JMnic
Product Specification
2SC3637
Silicon NPN Power Transistors
4