JMnic Product Specification 2SC5802 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P(H)IS package ・High voltage;high speed ・Wide area of safe operation APPLICATIONS ・For high voltage color display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 10 A ICM Collector current-Peak 30 A PC Total power dissipation 60 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SC5802 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBEsat MAX UNIT IC=6A; IB=1.5A 3.0 V Base-emitter saturation voltage IC=6A; IB=1.5A 1.5 V ICES Collector cut-off current VCE=1400V; VBE=0 1.0 mA ICBO Collector cut-off current VCB=800V; IE=0 10 μA IEBO Emitter cut-off current VEB=4V; IC=0 1.0 mA hFE-1 DC current gain IC=1A ; VCE=5V 15 48 hFE-2 DC current gain IC=6A ; VCE=5V 7 10 Fall time VCC=200V; IC=6A;IB1=1.2A IB2=-2.4A;RL =33.3Ω tf CONDITIONS 2 MIN TYP. 0.1 0.3 μs JMnic Product Specification 2SC5802 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3