Inchange Semiconductor Product Specification 2SC4437 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High speed ·High breakdown voltage ·High reliability APPLICATIONS ·Ultrahigh-definition color display ·Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 5 A ICM Collector current-peak 16 A PC Collector power dissipation 3 W TC=25℃ 50 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC4437 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 VCEsat Collector-emitter saturation voltage IC=4A;IB=1A 5 V VBEsat Base-emitter saturation voltage IC=4A;IB=1A 1.5 V ICES Collector cut-off current VCE=1500V 1.0 mA ICBO Collector cut-off current VCB=800V; IE=0 10 μA IEBO Emitter cut-off current VEB=4V; IC=0 1.0 mA hFE-1 DC current gain IC=1A ; VCE=5V 8 hFE-2 DC current gain IC=4A ; VCE=5V 4 800 UNIT V 6 Switching times tstg tf Storage time Fall time IC=4A;IB1=0.8A; IB2=-1.6A; VCC=250V 2 3.0 μs 0.3 μs Inchange Semiconductor Product Specification 2SC4437 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SC4437 Silicon NPN Power Transistors 4