Product Specification www.jmnic.com 2SC3686 Silicon NPN Power Transistors ESCRIPTION ・High breakdown voltage ・High reliability (adoption of HVP process). ・Fast speed ・Adoption of MBIT process. ・With TO-3PN package APPLICATIONS ・Ultrahigh-definition color display horizontal deflection output. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 7 A ICP Collector current-pulse 16 A PC Collector power dissipation 120 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification www.jmnic.com 2SC3686 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX 800 UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 V VCEsat Collector-emitter saturation voltage IC=5A IB=1.2A 5 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1.2A 1.5 V ICES Collector cut-off current VCB=1500V; IE=0 1 mA IEBO Emitter cut-off current VEB=4V; IC=0 1 mA hFE DC current gain IC=1A ; VCE=5V 3 μs 0.2 μs 8 Switching times tstg tf Storage time Fall time IC=4A; VCC=5V IB1=0.8A; IB2=-1.6A JMnic 0.1 Product Specification www.jmnic.com 2SC3686 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) JMnic