Inchange Semiconductor Product Specification 2SC5042 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High breakdown voltage, high reliability. ・High speed APPLICATIONS ・Ultrahigh-definition CRT display ・Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1600 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 7 A ICM Collector current-peak 16 A PC Collector power dissipation TC=25℃ 60 W 3 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC5042 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBEsat MAX UNIT IC=5A;IB=1.25 A 5 V Base-emitter saturation voltage IC=5A;IB=1.25A 1.5 V Collector-emitter sustaining voltage IC=100mA;IB=0 IEBO Emitter cut-off current VEB=4V IC=0 1 mA ICBO Collector cut-off current VCB=800V IE=0 10 μA ICES Collector cut-off current VCE=1600V; RBE=0 1 mA hFE-1 DC current gain IC=1 A ; VCE=5V 15 25 hFE-2 DC current gain IC=5A ; VCE=5V 4 7 VCEO(SUS) CONDITIONS MIN TYP. 800 V Switching times tstg tf Storage time Fall time IC=4A;RL=50Ω IB1=0.7A;- IB2=2A VCC=200V 2 0.1 2.0 μs 0.2 μs Inchange Semiconductor Product Specification 2SC5042 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SC5042 Silicon NPN Power Transistors 4