JMNIC BU2527AF

Product Specification
www.jmnic.com
BU2527AF
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-3PFa package
・High voltage
・High speed switching
APPLICATIONS
・For use in horizontal deflection
circuits of high resolution monitors
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
7.5
V
IC
Collector current (DC)
12
A
ICP
Collector current (Pulse)
30
A
IB
Base current (DC)
8
A
IBM
Base current (Pulse)
12
A
Ptot
Total power dissipation
45
W
150
℃
-65~150
℃
Tj
Tstg
TC=25℃
Max.operating junction temperature
Storage temperature
JMnic
Product Specification
www.jmnic.com
BU2527AF
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
Collector-emitter sustaining voltage
IC=100mA ;IB=0,L=25mH
800
V
VEBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
7.5
V
VCEsat
Collector-emitter saturation voltage
IC=6A ;IB=1.2A
5.0
V
VBEsat
Emitter-base saturation voltage
IC=6A ;IB=1.2A
1.3
V
ICES
Collector cut-off current
VCE=BVCES; VBE=0
TC=125℃
0.25
2.0
mA
IEBO
Emitter cut-off current
VEB=7.5V; IC=0
0.25
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=6A ; VCE=5V
JMnic
10
5
9
Product Specification
www.jmnic.com
BU2527AF
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
JMnic