SavantIC Semiconductor Product Specification BU2515DX Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of PC monitors. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7.5 V IC Collector current (DC) 9 A ICP Collector current (Pulse) 20 A IB Base current (DC) 5 A IBM Base current (Pulse) 7.5 A Ptot Total power dissipation 45 W Tj Tstg Max.operating junction temperature Storage temperature TC=25 150 -55~150 SavantIC Semiconductor Product Specification BU2515DX Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 800 V(BR)EBO Emitter-base breakdown voltage IE=600mA ;IC=0 7.5 VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=0.9A 5.0 V VBEsat Base-emitter saturation voltage IC=4.5A ;IB=0.9A 1.0 V ICES Collector cut-off current VCE=BVCES; VBE=0 TC=125 1.0 2.0 mA IEBO Emitter cut-off current VEB=6V; IC=0 130 hFE-1 DC current gain IC=1A ; VCE=5V 13 hFE-2 DC current gain IC=4.5A ; VCE=5V Diode forward voltage IF=4.5A VF CONDITIONS MIN 5 TYP. MAX V 13.5 8 V mA 10.2 2.2 2 UNIT V SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BU2515DX