SAVANTIC BU508AF

SavantIC Semiconductor
Product Specification
BU508AF
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PFa package
·High voltage
·High speed switching
APPLICATIONS
·For use in horizontal deflection
circuits of high resolution monitors
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
700
V
VEBO
Emitter-base voltage
Open collector
7.5
V
IC
Collector current (DC)
8
A
ICP
Collector current (Pulse)
15
A
IB
Base current (DC)
4
A
IBM
Base current (Pulse)
6
A
Ptot
Total power dissipation
34
W
TC=25
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
SavantIC Semiconductor
Product Specification
BU508AF
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ;IB=0,L=25mH
700
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
7.5
VCEsat
Collector-emitter saturation voltage
IC=4.5A; IB=1.6A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=4.5A ;IB=2A
1.1
V
ICES
Collector cut-off current
VCE=RatedVCE; VBE=0
TC=125
1.0
2.0
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
10
mA
hFE
DC current gain
IC=0.1A ; VCE=5V
fT
Transition frequency
IC=0.1A ; VCE=5V
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
2
MIN
TYP.
MAX
UNIT
V
13.5
6
V
30
7
MHz
125
pF
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
BU508AF