JMnic Product Specification Silicon NPN Power Transistors 2N6542 2N6543 DESCRIPTION ・With TO-3 package ・High voltage,high speed APPLICATIONS ・Switching regulators ・PWM inverters and motor controls ・Solenoid and relay drivers ・Deflection circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2N6542 VCBO Collector-base voltage 300 Open base 2N6543 VEBO Emitter-base voltage V 850 2N6542 Collector-emitter voltage UNIT 650 Open emitter 2N6543 VCEO VALUE V 400 Open collector 8 V IC Collector current 5 A ICM Collector current-peak 10 A IB Base current 5 A IE Emitter current 10 A IEM Emitter current-peak 20 A PD Total Power Dissipation 100 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ TC=25℃ JMnic Product Specification Silicon NPN Power Transistors 2N6542 2N6543 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-emitter sustaining voltage CONDITIONS 2N6542 MIN TYP. MAX UNIT 300 IC=0.1A ;IB=0 V 400 2N6543 VCEsat-1 Collector-emitter saturation voltage IC=3A; IB=0.6A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=5A; IB=1.0A 5.0 V Base-emitter saturation voltage IC=3A; IB=0.6A 1.4 V 2N6542 VCE=650V; VBE(off)=1.5V TC=100℃ 0.5 3.0 2N6543 VCE=850V; VBE(off)=1.5V TC=100℃ 0.5 3.0 1.0 VBEsat ICEV Collector cut-off current mA IEBO Emitter cut-off current VEB=8V; IC=0 hFE-1 DC current gain IC=1.5A ; VCE=2V 12 60 hFE-2 DC current gain IC=3A ; VCE=2V 7 35 Trainsistion frequency IC=0.2A ; VCE=10V;f=1MHz 6 35 MHz 0.05 μs 0.7 μs 4.0 μs 0.8 μs fT mA Switching times td Delay time tr Rise time tstg tf VCC=250V; IC=3.0A IB1=-IB2=0.6A;tp=0.1ms Storage time Fall time THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case 2 VALUE UNIT 1.75 ℃/W JMnic Product Specification Silicon NPN Power Transistors 2N6542 2N6543 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3