SEMICONDUCTOR 2N5551S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E B L L FEATURES : VCBO=180V, VCEO=160V D High Collector Breakdwon Voltage 3 G A 2 H Low Leakage Current. 1 : ICBO=50nA(Max.) VCB=120V Low Saturation Voltage P J MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 M K C Low Noise : NF=8dB (Max.) P N : VCE(sat)=0.2V(Max.) IC=50mA, IB=5mA DIM A B C D E G H J K L M N P 1. EMITTER MAXIMUM RATING (Ta=25 CHARACTERISTIC ) 2. BASE SYMBOL RATING UNIT Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6 V Collector Current IC 600 mA Base Current IB 100 mA PC * 350 mW Tj 150 Tstg -55 150 Collector Power Dissipation Junction Temperature Storage Temperature Range Note : * Package Mounted On 99.5% Alumina 10 8 1999. 11. 30 Revision No : 2 0.6 ) 3. COLLECTOR SOT-23 Marking Lot No. Type Name ZF 1/2 2N5551S ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL ICBO Collector Cut-off Current IEBO Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter * Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter * * Saturation Voltage Base-Emitter Saturation Voltage * TEST CONDITION MIN. TYP. MAX. UNIT VCB=120V, IE=0 - - 50 nA VCB=120V, IE=0, Ta=100 - - 50 A VEB=4V, IC=0 - - 50 nA V(BR)CBO IC=0.1mA, IE=0 180 - - V V(BR)CEO IC=1mA, IB=0 160 - - V V(BR)EBO IE=10 A, IC=0 6 - - V hFE(1) VCE=5V, IC=1mA 80 - - hFE(2) VCE=5V, IC=10mA 80 - 250 hFE(3) VCE=5V, IC=50mA 30 - - VCE(sat)1 IC=10mA, IB=1mA - - 0.15 VCE(sat)2 IC=50mA, IB=5mA - - 0.2 VBE(sat)1 IC=10mA, IB=1mA - - 1.0 VBE(sat)2 IC=50mA, IB=5mA - - 1.0 100 - 300 MHz fT Transition Frequency VCE=10V, IC=10mA, f=100MHz V V Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - - 6 pF Input Capacitance Cib VBE=0.5V, IC=0, f=1MHz - - 20 pF Small-Signal Current Gain hfe VCE=10V, IC=1mA, f=1kHz 50 - 200 Noise Figure NF - - 8 VCE=5V, IC=250 A Rg=1k dB , f=10Hz 15.7kHz * Pulse Test : Pulse Width 300 S, Duty Cycle 2%. 1999. 11. 30 Revision No : 2 2/2