SEMICONDUCTOR PZTA42 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION. A H L 2 FEATURES Complementary to PZTA92. E K B 1 MAXIMUM RATING (Ta=25 3 J ) G CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 5.0 V Collector Current IC 500 mA Emitter Current IE -500 mA PC * 1 W Junction Temperature Tj 150 Storage Temperature Tstg -55 150 F F 1 Collector Power Dissipation * Package Mounted On FR-4 PCB 36 18 2 DIM A 3 C B D 1. BASE 2. COLLECTOR (HEAT SINK) MILLIMETERS _ 0.2 6.5 + _ 0.2 3.5 + C 1.8 MAX D E 0.7+0.15/-0.1 _ 0.3 7+ F G 2.3 TYP 0.26+0.09/-0.02 H 3.0+0.15/-0.1 _ 0.25 1.75 + J K L 3. EMITTER 0.1 MAX 10 MAX SOT-223 1.5mm. : mountina pad for the collector lead min.6cm2 Marking Type Name PZTA42 Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Base Breakdown Voltage V(BR)CBO IC=100 A, IE=0 300 - - V Collector-Emitter Breakdown Voltage V(BE)CEO IC=1.0mA, IB=0 300 - - V IC=1.0mA, VCE=10V 40 - - IC=10mA, VCE=10V 40 - - IC=30mA, VCE=10V 40 - - * hFE DC Current Gain Collector-Emitter Saturation Voltage VCE(sat) IC=20mA, IB=2.0mA - - 0.5 V Base-Emitter Saturation Voltage VBE(sat) IC=20mA, IB=2.0mA - - 0.9 V 50 - - MHz - - 3.0 pF fT Transition Frequency Collector Output Capacitance Cob VCE=20V, IC=10mA, f=100MHz VCB=20V, IE=0, f=1MHz *Pulse Test : Pulse Width 300 S, Duty Cycle 2.0% 2004. 05. 21 Revision No : 0 1/2 PZTA42 2004. 05. 21 Revision No : 0 2/2