SEMICONDUCTOR KTA1520S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. E B L MAXIMUM RATING (Ta=25 -120 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -5 V DC IC -1 Pulse * ICP -2 Base Current IB -200 mA Collector Power Dissipation PC 150 mW Junction Temperature Tj 150 Tstg -55 150 2 3 1 P P N Storage Temperature Range DIM A B C D E G H J K L M N P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 M K C A J VCBO Collector-Base Voltage H UNIT A RATING G SYMBOL D ) CHARACTERISTIC Collector Current L 1. EMITTER 2. BASE 3. COLLECTOR * Pulse Width = 300 S, Duty Cycle 2%. SOT-23 Marking Lot No. Type Name KMH ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Base Breakdown Voltage V(BR)CBO IC=-100 A -120 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA -100 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=-100 A -5 - - V Collector Cut-Off Current ICBO VCB=-100V - - -100 nA Emitter Cut-Off Current IEBO VEB=-4V - - -100 nA Collector-Emitter Cut-Off Current ICES VCES=-100V - - -100 nA VCE(sat) (1) IC=-250mA, IB=-25mA - - -0.2 VCE(sat) (2) IC=-500mA, IB=-50mA - - -0.3 VBE(sat) IC=-500mA, IB=-50mA - - -1.1 V VBE VCE=-5V, IC=-1mA - - -1.0 V hFE(1) VCE=-5V, IC=-1mA 100 - - hFE(2) VCE=-5V, IC=-250mA 100 - - hFE(3) VCE=-5V, IC=-500mA 100 - 300 hFE(4) VCE=-5V, IC=-1A 50 - - VCE=-10V, IC=-50mA, f=100MHz 50 - - MHz - - 5 pF Collector-Emitter Saturation Voltage ** Base-Emitter Saturation Voltage ** Base-Emitter Voltag DC Current Gain ** fT Transition Frequency Collector Output Capacitance Cob VCB=-10V, f=1MHz V ** Pulse Width = 300 S, Duty Cycle 2%. 2003. 2. 25 Revision No : 1 1/2 KTA1520S -0.4 VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VCE(sat) - I C Ta=-25 C -0.3 IC -0.1 0 -0.001 -0.01 -0.1 -1 I C /I B =10 -0.3 -0.2 Ta=-55 C Ta=25 C Ta=100 C -0.1 0 -0.001 -0.01 -0.1 -1 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) VBE(sat) - I C h FE - I C 400 I C /I B =10 DC CURRENT GAIN h FE BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) -1.2 IC /I /I B= B= 10 50 -0.2 -0.4 -1.0 Ta=-55 C -0.8 Ta=25 C Ta=100 C -0.6 -0.4 -0.001 -0.003 -0.01 -0.03 -0.1 -1 -0.3 -3 VCE =-5V Ta=100 C 300 200 100 Ta=25 C Ta=-55 C 0 -0.001 -0.003 -0.01 -0.03 -0.1 -0.3 -1 -3 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (A) I C - VBE -1 VCE =-5V -0.01 Ta=-55 C -0.03 Ta=2 100 C -0.1 5 C -0.3 Ta= COLLECTOR CURRENT I C (A) -3 -0.003 -0.001 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 BASE-EMITTER VOLTAGE VBE (V) 2003. 2. 25 Revision No : 1 2/2