SEMICONDUCTOR KTC9014S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L Excellent hFE Linearity 2 H Complementary to KTC9015S. 3 G A Low Noise :NF=1dB(Typ.) at f=1kHz. 1 SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 150 mA Emitter Current IE -150 mA PC * 350 mW Tj 150 Tstg -55 150 Collector Power Dissipation Junction Temperature Storage Temperature Range * PC : Package Mounted On 99.5% Alumina (10 8 0.6 J K CHARACTERISTIC C ) P N P MAXIMUM RATING (Ta=25 D : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). DIM A B C D E G H J K L M N P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 M 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 ) Marking h FE Rank BD Type Name ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Lot No. ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=50V, IE=0 - - 50 nA Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA 100 - 1000 - 0.1 0.25 V 60 - - MHz - 2.0 3.5 pF - 1.0 10 dB hFE (Note) DC Current Gain Collector-Emitter Saturation Voltage VCE(sat) fT Transition Frequency VCE=5V, IC=1mA IC=100mA, IB=10mA VCE=10V, IC=1mA, f=100MHz Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz Noise Figure NF VCE=6V, IC=0.1mA, Rg=10k Note : hFE Classification 2002. 9. 3 B:100 300, C:200 600, Revision No : 0 D:400 , f=1kHz 1000 1/1